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RN1910FS

Description
50 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size116KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

RN1910FS Overview

50 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR

RN1910FS Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PDSO-F6
Contacts6
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage20 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)300
JESD-30 codeR-PDSO-F6
JESD-609 codee0
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.05 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
RN1910FS,RN1911FS
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)
RN1910FS,RN1911FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Two devices are incorporated into a fine pitch small mold (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
0.35 0.35
1.0±0.05
1.0±0.05
0.1±0.05
0.8±0.05
0.1±0.05
0.15±0.05
Unit: mm
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Complementary to RN2910FS, RN2911FS
0.7±0.05
1
2
3
6
5
4
0.1±0.05
fS6
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note 1)
T
j
T
stg
Rating
20
20
5
50
50
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
0.48
-0.04
+0.02
Equivalent Circuit and Bias Resistor Values
1. EMITTER1
(E1)
1.EMIITTER1
(E1)
2. BASE1
(B1)
2.EMITTER2
(E2)
3. COLLECTOR2
(B2)
(C2)
3.BASE2
4. EMITTER2
(E2)
4.COLLECTOR2 (C2)
5. BASE2
(B2)
5.BASE1
(B2)
6. COLEECTOR1
(C1)
6.COLLECTOR1
(C1)
2-1F1D
Weight: 0.001g (typ.)
Equivalent Circuit
(top view)
6
5
4
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Note:
Q1
Q2
1
2
3
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN1910FS
RN1911FS
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
C
ob
R1
Test Condition
V
CB
=
20 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
1 mA
I
C
=
5 mA, I
B
=
0.25 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
300
3.76
8
Typ.
1.2
4.7
10
Max
100
100
0.15
5.64
12
V
pF
Unit
nA
nA
1
2007-11-01

RN1910FS Related Products

RN1910FS RN1911FS
Description 50 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR 50 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
package instruction SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6
Contacts 6 6
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR
Maximum collector current (IC) 0.05 A 0.05 A
Collector-emitter maximum voltage 20 V 20 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 300 300
JESD-30 code R-PDSO-F6 R-PDSO-F6
JESD-609 code e0 e0
Number of components 2 2
Number of terminals 6 6
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.05 W 0.05 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface TIN LEAD TIN LEAD
Terminal form FLAT FLAT
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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