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RN1911AFS

Description
80 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size129KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

RN1911AFS Overview

80 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR

RN1911AFS Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-F6
Contacts6
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.08 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-F6
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
RN1910AFS, RN1911AFS
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN1910AFS, RN1911AFS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package.
Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly costs.
Complementary to the RN2910AFS/RN2911AFS
0.48
-0.04
+0.02
Unit: mm
1.0±0.05
0.1±0.05
0.35 0.35
0.8±0.05
0.1±0.05
0.15±0.05
Unit
nA
nA
V
pF
1.0±0.05
0.7±0.05
1
2
3
6
5
4
0.1±0.05
Equivalent Circuit and Bias Resistor Values
C
R1
E
fS6
JEDEC
JEITA
TOSHIBA
1. EMITTER1
2. BASE1
3. COLLECTOR2
4. EMITTER2
5. BASE2
6. COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note 1)
T
j
T
stg
Rating
50
50
5
80
50
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
2-1F1D
Weight: 0.001 g (typ.)
Equivalent Circuit
(top view)
6
5
4
Q2
Using continuously under heavy loads (e.g. the application of
Q1
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
1
2
3
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Note:
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 common)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN1910AFS
RN1911AFS
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
C
ob
R1
Test Condition
V
CB
=
50 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
1 mA
I
C
=
5 mA, I
B
=
0.25 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
120
Typ.
Max
100
100
700
0.15
3.76
8
0.7
4.7
10
5.64
12
1
2007-11-01

RN1911AFS Related Products

RN1911AFS RN1910AFS
Description 80 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR 80 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
package instruction SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6
Contacts 6 6
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.08 A 0.08 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 120 120
JESD-30 code R-PDSO-F6 R-PDSO-F6
Number of components 2 2
Number of terminals 6 6
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

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