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SMBH1G150US60

Description
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, 7PM-BA, 7 PIN
CategoryDiscrete semiconductor    The transistor   
File Size386KB,10 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

SMBH1G150US60 Overview

Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, 7PM-BA, 7 PIN

SMBH1G150US60 Parametric

Parameter NameAttribute value
MakerFairchild
package instructionFLANGE MOUNT, R-PUFM-X7
Contacts7
Reach Compliance Codeunknown
Other featuresLOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Shell connectionISOLATED
Maximum collector current (IC)150 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-PUFM-X7
Number of components1
Number of terminals7
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)625 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)460 ns
Nominal on time (ton)195 ns
VCEsat-Max2.7 V
This Material Copyrighted By Its Respective Manufacturer
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