RN1972FS,RN1973FS
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1972FS,RN1973FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Two devices are incorporated into a fine pitch small mold (6-pin) package
•
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
•
Complementary to RN2972FS, RN2973FS
0.1±0.05
1.0±0.05
0.8±0.05
0.1±0.05
0.15±0.05
Unit: mm
0.35 0.35
1.0±0.05
0.7±0.05
1
2
3
6
5
4
0.1±0.05
0.48
-0.04
+0.02
Equivalent Circuit and Bias Resistor Values
fS6
1.EMIITTER1
2.EMITTER2
3.BASE2
4.COLLECTOR2
5.BASE1
6.COLLECTOR1
(E1)
(E2)
(B2)
(C2)
(B1)
(C1)
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note 1)
T
j
T
stg
Rating
20
20
5
50
50
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-1F1C
Weight: 0.001 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Equivalent Circuit
(top view)
6
5
4
Q1
Q2
1
2
3
1
2007-11-01
RN1972FS,RN1973FS
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN1972FS
RN1973FS
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
C
ob
R1
Test Condition
V
CB
=
20 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
1 mA
I
C
=
5 mA, I
B
=
0.25 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
⎯
Min
⎯
⎯
300
⎯
⎯
17.6
37.6
Typ.
⎯
⎯
⎯
⎯
1.2
22
47
Max
100
100
⎯
0.15
⎯
26.4
56.4
V
pF
kΩ
Unit
nA
nA
2
2007-11-01
RN1972FS,RN1973FS
(Q1, Q2 common)
RN1972FS
100
IC - VI(ON)
10000
RN1972FS
IC - VI(OFF)
COLLECTOR CURRENT IC (mA)
Ta=100°C
10
COLLECTOR CURRENT IC (μA)
1000
Ta=100°C
100
25
25
1
-25
EMITTER COMMON
VCE=0.2V
1
10
100
-25
EMITTER COMMON
VCE=5V
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.1
0.1
INPUT VOLTAGE VI(ON) (V)
INPUT VOLTAGE VI(OFF) (V)
RN1973FS
100
IC - VI(ON)
10000
COLLECTOR CURRENT IC (μA)
RN1973FS
IC - VI(OFF)
COLLECTOR CURRENT IC (mA)
10
Ta=100°C
1000
Ta=100°C
25
-25
100
25
EMITTER COMMON
VCE=5V
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
-25
EMITTER COMMON
VCE=0.2V
0.1
0.1
1
10
100
INPUT ON VOLTAGE VI(ON) (V)
INPUT ON VOLTAGE VI(OFF) (V)
3
2007-11-01
RN1972FS,RN1973FS
(Q1, Q2 common)
RN1972FS
1000
hFE - IC
COLLECTOR - EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
1000
RN1972FS
VCE(sat) - IC
DC CURRENT GAIN hFE
Ta=100°C
25
-25
100
100
Ta=100°C
10
25
-25
1
0.1
EMITTER COMMON
IC / IB=20
100
EMITTER COMMON
VCE=5V
10
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
1
10
COLLECTOR CURRENT IC (mA)
RN1973FS
1000
hFE - IC
Ta=100°C
COLLECTOR - EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
1000
RN1973FS
VCE(sat) - IC
DC CURRENT GAIN hFE
25
-25
100
100
Ta=100°C
10
-25
25
EMITTER COMMON
IC / IB=20
EMITTER COMMON
VCE=5V
10
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
1
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
4
2007-11-01
RN1972FS,RN1973FS
Type Name
Marking
6
5
4
Type name
RN1972FS
JH
1
6
2
5
3
4
Type name
RN1973FS
JJ
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
5
2007-11-01
Electronics Design Contest
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