RN2905FE datasheet, PDF - EEWORLD Datasheet

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RN2905FE: DescriptionSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications; CategoryDiscrete semiconductor The transistor; File Size550KB，8 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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RN2905FE Overview

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2905FE Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PDSO-F6
Contacts	6
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO IS 21.37
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80
JESD-30 code	R-PDSO-F6
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.1 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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RN2901FE~RN2906FE

TOSHIBA Transistor

Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

RN2901FE,RN2902FE,RN2903FE

RN2904FE,RN2905FE,RN2906FE

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (6-pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more

compact equipment and lowers assembly cost.

•

Complementary to RN1901FE~RN1906FE

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN2901FE

RN2902FE

RN2903FE

RN2904FE

RN2905FE

RN2906FE

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

JEDEC

JEITA

TOSHIBA

―

2-2N1G

Weight:0.003 g (typ.)

Absolute Maximum Ratings

(Ta = 25°C)

(Q1, Q2 common)

Equivalent Circuit

Symbol

RN2901FE~

RN2906FE

RN2901FE~

RN2904FE

RN2905FE,

RN2906FE

CBO

CEO

Rating

−50

−10

EBO

−5

RN2901FE~

RN2906FE

(Note 1)

stg

−100

100

150

−55~150

°C

Unit

Characteristics

Collector-base voltage

Collector-emitter voltage

(top view)

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

2007-11-01

RN2905FE Related Products

	RN2905FE	RN2901FE	RN2902FE	RN2903FE	RN2904FE	RN2906FE
Description	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6
Contacts	6	6	6	6	6	6
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO IS 21.37	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 10
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80	30	50	70	80	80
JESD-30 code	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6
Number of components	2	2	2	2	2	2
Number of terminals	6	6	6	6	6	6
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.1 W	0.1 W	0.1 W	0.1 W	0.1 W	0.1 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz
Base Number Matches	1	1	-	-	1	1

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