RN2966FS datasheet, PDF - EEWORLD Datasheet

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RN2966FS: DescriptionSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications; CategoryDiscrete semiconductor The transistor; File Size166KB，8 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN2966FS Overview

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2966FS Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-F6
Contacts	6
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	20 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	120
JESD-30 code	R-PDSO-F6
JESD-609 code	e0
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.05 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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RN2961FS~RN2966FS

TOSHIBA Transistor

Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2961FS,RN2962FS,RN2963FS

RN2964FS,RN2965FS,RN2966FS

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

1.0±0.05

0.1±0.05

0.8±0.05

0.1±0.05

0.15±0.05

Unit: mm

•

Two devices are incorporated into a fine pitch Small Mold (6 pin)

0.35 0.35

1.0±0.05

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

0.7±0.05

package.

0.1±0.05

Equivalent Circuit and Bias Resistor Values

Type No.

RN2961FS

RN2962FS

RN2963FS

RN2964FS

RN2965FS

RN2966FS

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

0.48

-0.04

+0.02

•

Complementary to RN1961FS~RN1966FS

fS6

JEDEC

JEITA

1.EMIITTER1

2.EMITTER2

3.BASE2

4.COLLECTOR2

5.BASE1

6.COLLECTOR1

(E1)

(E2)

(B2)

(C2)

(B1)

(C1)

―

2-1F1C

TOSHIBA

Weight: 0.001 g (typ.)

Absolute Maximum Ratings

(Ta = 25°C) (Q1, Q2 common)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2961FS~2966FS

RN2961FS~2964FS

RN2965FS, 2966FS

Symbol

CBO

CEO

EBO

(Note 1)

stg

Rating

−20

−10

−5

−50

150

−55~150

Unit

°C

Equivalent Circuit

(top view)

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

2007-11-01

RN2966FS Related Products

	RN2966FS	RN2962FS	RN2963FS	RN2965FS
Description	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
package instruction	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6
Contacts	6	6	6	6
Reach Compliance Code	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.05 A	0.05 A	0.05 A	0.05 A
Collector-emitter maximum voltage	20 V	20 V	20 V	20 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	120	60	100	120
JESD-30 code	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6
JESD-609 code	e0	e0	e0	e0
Number of components	2	2	2	2
Number of terminals	6	6	6	6
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.05 W	0.05 W	0.05 W	0.05 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	FLAT	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Maker	Toshiba Semiconductor	Toshiba Semiconductor	-	Toshiba Semiconductor

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