TC74LVX125F/FT
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74LVX125F,TC74LVX125FT
Quad Bus Buffer
The TC74LVX125F/ FT is a high-speed CMOS quad bus buffer
fabricated with silicon gate CMOS technology. Designed for use
in 3-V systems, it achieves high-speed operation while
maintaining the CMOS low power dissipation. This device is
suitable for low-voltage and battery operated systems.
This device requires the 3-state control input
G
to be set high
to place the output into the high-impedance.
An input protection circuit ensures that 0 to 5.5V can be
applied to the input pins without regard to the supply voltage.
This device can be used to interface 5V to 3V systems and two
supply systems such as battery back up. This circuit prevents
device destruction due to mismatched supply and input voltages.
TC74LVX125F
TC74LVX125FT
Features
•
•
•
•
•
•
•
High-speed: t
pd
=
4.4 ns (typ.) (V
CC
=
3.3 V)
Low power dissipation: I
CC
=
4
μA
(max) (Ta
=
25°C)
Input voltage level: V
IL
=
0.8 V (max) (V
CC
=
3 V)
V
IH
=
2.0 V (min) (V
CC
=
3 V)
Power-down protection is provided on all inputs
∼
Balanced propagation delays: t
pLH
−
t
pHL
Low noise: V
OLP
=
0.5 V (max)
Pin and function compatible with 74HC125
Weight
SOP14-P-300-1.27A
TSSOP14-P-0044-0.65A
: 0.18 g (typ.)
: 0.06 g (typ.)
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2012-02-29
TC74LVX125F/FT
Pin Assignment
(top view)
IEC Logic Symbol
1G
(1)
(2)
(4)
(5)
(10)
(9)
(13)
(12)
1G
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
CC
4G
EN
(3)
(6)
(8)
(11)
1A
2G
1Y
2Y
3Y
4Y
1A
1Y
2G
4A
4Y
3G
2A
3G
3A
4G
2A
2Y
GND
4A
3A
3Y
Truth Table
Inputs
Outputs
A
X
L
H
Y
Z
L
H
G
H
L
L
X: Don’t care
Z: High impedance
Absolute Maximum Ratings
(Note)
Characteristics
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Rating
−0.5
to 7.0
−0.5
to 7.0
−0.5
to V
CC
+
0.5
−20
±20
±25
±50
180
−65
to 150
Unit
V
V
V
mA
mA
mA
mA
mW
°C
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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2012-02-29
TC74LVX125F/FT
Operating Ranges
(Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall time
Symbol
V
CC
V
IN
V
OUT
T
opr
dt/dv
Rating
2.0 to 3.6
0 to 5.5
0 to V
CC
−40
to 85
0 to 100
Unit
V
V
V
°C
ns/V
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Electrical Characteristics
DC Characteristics
Characteristics
Symbol
Test Condition
V
CC
(V)
2.0
H-level
Input voltage
L-level
V
IL
⎯
V
IH
⎯
3.0
3.6
2.0
3.0
3.6
V
IN
=
V
IH
I
OH
= −50 μA
or V
IL
I
OH
= −4
mA
V
IN
=
V
IH
I
OL
=
50
μA
or V
IL
I
OL
=
4 mA
V
IN
=
V
IH
or V
IL
V
OUT
=
V
CC
or GND
V
IN
=
5.5 V or GND
V
IN
=
V
CC
or GND
I
OL
=
50
μA
I
OH
= −50 μA
2.0
3.0
3.0
2.0
3.0
3.0
3.6
3.6
3.6
Min
1.5
2.0
2.4
⎯
⎯
⎯
1.9
2.9
2.58
⎯
⎯
⎯
⎯
⎯
⎯
Ta
=
25°C
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
2.0
3.0
⎯
0
0
⎯
⎯
⎯
⎯
Max
⎯
⎯
⎯
0.5
0.8
0.8
⎯
⎯
⎯
0.1
0.1
0.36
±0.25
±0.1
4.0
Ta
= −40
to
85°C
Min
1.5
2.0
2.4
⎯
⎯
⎯
1.9
2.9
2.48
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
⎯
⎯
0.5
0.8
0.8
⎯
⎯
⎯
0.1
0.1
0.44
±2.5
±1.0
40.0
μA
μA
μA
V
V
Unit
H-level
Output voltage
L-level
V
OH
V
OL
3-state output
Off-state current
Input leakage current
Quiescent supply current
I
OZ
I
IN
I
CC
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2012-02-29
TC74LVX125F/FT
AC Characteristics
(input: t
r
=
t
f
=
3 ns)
Characteristics
Symbol
Test Condition
V
CC
(V)
t
pLH
Propagation delay time
t
pHL
⎯
3.3
±
0.3
2.7
C
L
(pF)
15
50
15
50
15
50
15
50
50
50
50
50
(Note 2)
⎯
(Note 3)
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Ta
=
25°C
Typ.
5.8
8.3
4.4
6.9
5.3
7.8
4.0
6.5
10.0
8.3
⎯
⎯
4
6
14
Max
10.1
13.6
6.2
9.7
9.3
12.8
5.6
9.1
15.7
11.2
1.5
1.5
10
⎯
⎯
Ta
= −40
to
85°C
Min
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
⎯
⎯
⎯
⎯
⎯
Max
13.5
17.0
8.5
12.0
12.5
16.0
7.5
11.0
19.0
13.0
1.5
1.5
10
⎯
⎯
ns
ns
ns
Unit
t
pZL
Output enable time
t
pZH
t
pLZ
t
pHZ
t
osLH
t
osHL
C
IN
C
OUT
C
PD
R
L
=
1 kΩ
2.7
3.3
±
0.3
2.7
3.3
±
0.3
2.7
3.3
±
0.3
Output disable time
R
L
=
1 kΩ
Output to output skew
Input capacitance
Output capacitance
Power dissipation capacitance
(Note 1)
ns
pF
pF
pF
Note 1: Parameter guaranteed by design.
(t
osLH
=
|t
pLHm
−
t
pLHn
|, t
osHL
=
|t
pHLm
−
t
pHLn
|)
Note 2: Parameter guaranteed by design.
Note 3: C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption.
Average operating current can be obtained by the equation:
I
CC (opr)
=
C
PD
½V
CC
½f
IN
+
I
CC
/4 (per bit)
Noise Characteristics
(Ta
=
25°C, input: t
r
=
t
f
=
3 ns, C
L
=
50 pF)
Characteristics
Quiet output maximum
dynamic
Quiet output minimum
dynamic
Minimum high level dynamic
input voltage
Maximum low level dynamic
input voltage
Symbol
Test Condition
⎯
⎯
⎯
⎯
V
CC
(V)
3.3
3.3
3.3
3.3
Typ.
Limit
Unit
V
OL
V
OL
V
IH
V
IL
V
OLP
V
OLV
V
IHD
V
ILD
0.3
−0.3
⎯
⎯
0.5
−0.5
2.0
0.8
V
V
V
V
Input Equivalent Circuit
INPUT
4
2012-02-29
TC74LVX125F/FT
Package Dimensions
Weight: 0.18 g (typ.)
5
2012-02-29
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