TC74VHCT00AF/AFT/AFK
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74VHCT00AF,TC74VHCT00AFT,TC74VHCT00AFK
Quad 2-Input NAND Gate
TC74VHCT00AF
The TC74VHCT00A is an advanced high speed CMOS 2-INPUT
NAND GATE fabricated with silicon gate C
2
MOS technology.
It achieves the high speed operation similar to equivalent
Bipolar Schottky TTL while maintaining the CMOS low power
dissipation.
The input voltage are compatible with TTL output voltage.
This device may be used as a level converter for interfacing 3.3
V to 5 V system.
Input protection and output circuit ensure that 0 to 5.5 V can be
applied to the input and output
(Note)
pins without regard to the
supply voltage. These structure prevents device destruction due to
mismatched supply and input/output voltages such as battery
back up, hot board insertion, etc.
Note:
V
CC
=
0 V
TC74VHCT00AFT
Features
•
•
•
•
•
•
•
High speed: t
pd
=
5.0 ns (typ.) at V
CC
=
5 V
Low power dissipation: I
CC
=
2
μA
(max) at Ta
=
25°C
Compatible with TTL inputs:
V
IL
=
0.8 V (max)
V
IH
=
2.0 V (min)
TC74VHCT00AFK
Power down protection is provided on all inputs and outputs.
Balanced propagation delays: t
pLH
≈
t
pHL
Low noise: V
OLP
=
0.8 V (max)
Pin and function compatible with the 74 series
(74AC/HC/F/ALS/LS etc.) 00 type.
Weight
SOP14-P-300-1.27A:
0.18 g (typ.)
TSSOP14-P-0044-0.65A: 0.06 g (typ.)
VSSOP14-P-0030-0.50:
0.02 g (typ.)
1
2012-02-29
TC74VHCT00AF/AFT/AFK
Pin Assignment
IEC Logic Symbol
1A
1B
2A
2B
3A
3B
4A
4B
(1)
(2)
(4)
(5)
(9)
(10)
(12)
(13)
&
(3)
(6)
(8)
(11)
1A
1B
1Y
2A
2B
2Y
GND
1
2
3
4
5
6
7
(top view)
14
13
12
11
10
9
8
V
CC
4B
4A
4Y
3B
3A
3Y
1Y
2Y
3Y
4Y
Truth Table
A
L
L
H
H
B
L
H
L
H
Y
H
H
H
L
Absolute Maximum Ratings (Note 1)
Characteristics
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Rating
−0.5
to 7.0
−0.5
to 7.0
−0.5
to 7.0
−0.5
to V
CC
+
0.5
−20
±20
±25
±50
180
−65
to 150
(Note 4)
(Note 2)
(Note 3)
Unit
V
V
V
mA
mA
mA
mA
mW
°C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: V
CC
=
0 V
Note 3: High or low state. I
OUT
absolute maximum rating must be observed.
Note 4: V
OUT
<
GND, V
OUT
>
V
CC
2
2012-02-29
TC74VHCT00AF/AFT/AFK
Operating Ranges (Note 1)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall time
Symbol
V
CC
V
IN
V
OUT
T
opr
dt/dv
Rating
4.5 to 5.5
0 to 5.5
0 to 5.5
0 to V
CC
−40
to 85
0 to 20
(Note 2)
(Note 3)
Unit
V
V
V
°C
ns/V
Note 1: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
Note 2: V
CC
= 0 V
Note 3: High or low state.
Electrical Characteristics
DC Characteristics
Characteristics
High-level input
voltage
Low-level input
voltage
High-level output
voltage
Low-level output
voltage
Input leakage
current
Quiescent supply
current
Output leakage
current
Symbol
Test Condition
V
CC
(V)
V
IH
V
IL
V
OH
―
―
I
OH
=
−50 μA
V
IN
=
V
IH
or V
IL
I
OH
=
−8
mA
I
OL
=
50
μA
V
IN
=
V
IH
or V
IL
I
=
8 mA
OL
V
IN
=
5.5 V or GND
V
IN
=
V
CC
or GND
Per input: V
IN
=
3.4 V
Other input: V
CC
or GND
V
OUT
=
5.5 V
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
0 to 5.5
5.5
5.5
0
Min
2.0
―
4.40
3.94
―
―
―
―
―
―
Ta
=
25°C
Typ.
―
―
4.50
―
0.0
―
―
―
―
―
Max
―
0.8
―
―
0.1
0.36
±0.1
2.0
1.35
0.5
Ta
=
−40
to 85°C
Min
2.0
―
4.40
3.80
―
―
―
―
―
―
Max
―
0.8
―
―
0.1
0.44
±1.0
20.0
1.50
5.0
V
V
V
Unit
V
OL
I
IN
I
CC
I
CCT
I
OPD
V
μA
μA
mA
μA
3
2012-02-29
TC74VHCT00AF/AFT/AFK
AC Characteristics
(input: t
r
=
t
f
=
3 ns)
Characteristics
Symbol
t
pLH
t
pHL
C
IN
C
PD
Test Condition
V
CC
(V)
Propagation delay
time
Input capacitance
Power dissipation
capacitance
―
5.0
±
0.5
―
(Note)
C
L
(pF)
15
50
Min
―
―
―
―
Ta
=
25°C
Typ.
5.0
5.5
4
17
Max
6.9
7.9
10
―
Ta
=
−40
to 85°C
Min
1.0
1.0
―
―
Max
8.0
9.0
10
―
ns
pF
pF
Unit
Note:
C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
CC (opr)
=
C
PD
·V
CC
·f
IN
+
I
CC
/ 4 (per gate)
Noise Characteristics
(input: t
r
=
t
f
=
3 ns)
Characteristics
Quiet output maximum dynamic V
OL
Quiet output minimum dynamic V
OL
Minimum high level dynamic input
voltage
Maximum low level dynamic input
voltage
Symbol
V
OLP
V
OLV
V
IHD
V
ILD
C
L
=
50 pF
C
L
=
50 pF
C
L
=
50 pF
C
L
=
50 pF
Test Condition
V
CC
(V)
5.0
5.0
5.0
5.0
Ta
=
25°C
Typ.
0.4
−0.4
―
―
Limit
0.8
−0.8
2.0
0.8
Unit
V
V
V
V
4
2012-02-29
TC74VHCT00AF/AFT/AFK
Package Dimensions
Weight: 0.18 g (typ.)
5
2012-02-29
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