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TK16G60W

Description
Switching Voltage Regulators
CategoryDiscrete semiconductor    The transistor   
File Size241KB,10 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

TK16G60W Overview

Switching Voltage Regulators

TK16G60W Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknow
Avalanche Energy Efficiency Rating (Eas)194 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)15.8 A
Maximum drain current (ID)15.8 A
Maximum drain-source on-resistance0.19 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)130 W
Maximum pulsed drain current (IDM)63.2 A
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
TK16G60W
MOSFETs
Silicon N-Channel MOS (DTMOS)
TK16G60W
1. Applications
Switching Voltage Regulators
2. Features
(1)
(2)
(3)
Low drain-source on-resistance: R
DS(ON)
= 0.16
(typ.)
by used to Super Junction Structure : DTMOS
Easy to control Gate switching
Enhancement mode: V
th
= 2.7 to 3.7 V (V
DS
= 10 V, I
D
= 0.79 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (Heatsink)
3: Source
D2PAK
1
2012-08-28
Rev.2.0
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