JMnic
Product Specification
Silicon PNP Power Transistors
2SA1249
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SC3117
・High
breakdown voltage
・Large
current capacity
APPLICATIONS
・For
color TV sound output,converters,
Inverters applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
10
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-180
-160
-6
-1.5
-2.5
1.0
W
UNIT
V
V
V
A
A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
ob
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=-1mA; R
BE
=∞
I
C
=-10μA; I
E
=0
I
E
=-10μA ; I
C
=0
I
C
=-500mA; I
B
=-50mA
I
C
=-500mA; I
B
=-50mA
V
CB
=-120V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-100mA ; V
CE
=-5V
I
C
=-10mA ; V
CE
=-5V
I
C
=-50mA ; V
CE
=-10V
I
E
=0 ; V
CB
=-10V;f=1MHz
100
90
MIN
2SA1249
TYP.
-160
-180
-6
-0.2
-0.85
MAX
UNIT
V
V
V
-0.5
-1.2
-1.0
-1.0
400
V
V
μA
μA
120
22
MHz
pF
h
FE-1
Classifications
R
100-200
S
140-280
T
200-400
2