c. When mounted on 1" square P.C.B. (Fr-4 material).
d. Parametric verification ongoing.
PCB Mount
c
SYMBOL
R
thJA
R
thJC
LIMIT
40
0.4
UNIT
°C/W
S11-2028-Rev. D, 17-Oct-11
1
Document Number: 68668
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM85N15-19
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= 85 A, V
GS
= 0 V
V
DD
= 75 V, R
L
= 0.88
I
D
85 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
GS
= 10 V
V
DS
= 75 V, I
D
= 85 A
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
-
-
-
-
-
-
0.5
-
-
-
-
-
-
5026
450
165
80
33
12
1.6
17
24
35
11
-
0.9
6285
565
205
120
-
-
2.6
26
36
53
17
140
1.5
A
V
ns
nC
pF
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
DS
= 150 V
V
DS
= 150 V, T
J
= 125 °C
V
DS
= 150 V, T
J
= 175 °C
V
DS
5 V
I
D
= 30 A
I
D
= 30 A, T
J
= 125 °C
I
D
= 30 A, T
J
= 175 °C
150
2.5
-
-
-
-
120
-
-
-
-
-
3.0
-
-
-
-
-
0.016
-
-
79
-
3.5
± 100
1
50
300
-
0.019
0.039
0.051
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 30 A
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2028-Rev. D, 17-Oct-11
2
Document Number: 68668
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM85N15-19
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
180
V
GS
= 10 V thru 7 V
150
V
GS
= 6 V
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Vishay Siliconix
140
120
100
80
60
40
T
C
= 25 °C
20
V
GS
= 4 V, 3 V
120
90
60
V
GS
= 5 V
30
T
C
= 125 °C
T
C
= - 55 °C
0
2
4
6
8
10
0
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
0
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
150
0.05
Transfer Characteristics
g
fs
- Transconductance (S)
90
T
C
= - 55 °C
T
C
= 25 °C
R
DS(on)
- On-Resistance (Ω)
120
0.04
0.03
60
T
C
= 125 °C
30
0.02
V
GS
= 10 V
0.01
0
0
12
24
36
48
60
0
0
20
40
60
80
100
120
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
10 000
V
GS
-
Gate-to-Source
Voltage (V)
On-Resistance vs. Drain Current
10
I
D
= 85 A
8000
C - Capacitance (pF)
8
V
DS
= 75 V
6
6000
C
iss
4000
4
2000
C
rss
0
0
20
2
C
oss
0
40
60
80
100
0
10
20
30
40
50
60
70
80
90
100
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total
Gate
Charge (nC)
Capacitance
Gate Charge
S11-2028-Rev. D, 17-Oct-11
3
Document Number: 68668
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM85N15-19
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
3.0
I
D
= 30 A
2.5
R
DS(on)
- On-Resistance
I
S
-
Source
Current (A)
Vishay Siliconix
100
10
V
GS
= 10 V
(Normalized)
T
J
= 150 °C
1
2.0
T
J
= 25 °C
0.1
1.5
1.0
0.01
0.5
- 50
0.001
- 25
0
25
50
75
100
125
150
175
0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
-
Source-to-Drain
Voltage (V)
On-Resistance vs. Junction Temperature
0.20
1.0
0.5
R
DS(on)
- On-Resistance (Ω)
Source Drain Diode Forward Voltage
0.16
V
GS(th)
Variance (V)
0
- 0.5
0.12
I
D
= 5 mA
- 1.0
- 1.5
- 2.0
I
D
= 250 μA
0.08
T
J
= 150 °C
0.04
0
0
2
4
6
T
J
= 25 °C
8
10
- 2.5
- 50
- 25
0
25
50
75
100
125
150
175
V
GS
-
Gate-to-Source
Voltage (V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
200
I
D
= 10 mA
Threshold Voltage
V
DS
- Drain-to-Source
Voltage
(V)
190
180
170
160
150
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S11-2028-Rev. D, 17-Oct-11
4
Document Number: 68668
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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