SSM6N55NU
MOSFETs
Silicon N-Channel MOS
SSM6N55NU
1. Applications
•
•
Power Management Switches
DC-DC Converters
2. Features
(1)
(2)
4.5V gate drive voltage.
Low drain-source on-resistance
: R
DS(ON)
= 46 mΩ (max) (@V
GS
= 10 V)
R
DS(ON)
= 64 mΩ (max) (@V
GS
= 4.5 V)
3. Packaging and Pin Configuration
1. Source1
2. Gate1
3. Drain2
4. Source2
5. Gate2
6. Drain1
UDFN6
1
2012-07-19
Rev.1.0
SSM6N55NU
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
25
(Q1,Q2 Common)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation
Channel temperature
Storage temperature
t
≤
10 s
(Note 1)
(Note 1), (Note 2)
(Note 3)
(Note 3)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
P
D
T
ch
T
stg
Rating
30
±20
4.0
10
1
2
150
-55 to 150
W
W
A
Unit
V
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Pulse width (PW)
≤
10 ms, duty
≤
1%
Note 3: Device mounted on a 25.4 mm
×
25.4 mm
×
1.6 mm FR4 glass epoxy board (total dissipation)
(with a dissipating copper surface of 25.4 mm
×
25.4 mm)
Note:
Note:
Note:
The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,
operators, soldering irons and other objects should be protected against anti-static discharge.
The channel-to-ambient thermal resistance, R
th(ch-a)
, and the drain power dissipation, P
D
, vary according to
the board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.
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2012-07-19
Rev.1.0
SSM6N55NU
5. Electrical Characteristics
5.1. Static Characteristics (T
a
= 25
unless otherwise specified)(Q1,Q2 Common)
25
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Forward transfer admittance
(Note 2)
(Note 3)
(Note 3)
Symbol
I
GSS
I
DSS
Test Condition
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 30 V, V
GS
= 0 V
Min
30
10
1.3
3.4
Typ.
33
48
6.8
Max
±10
1
2.5
46
64
S
mΩ
V
Unit
µA
V
(BR)DSS
I
D
= 10 mA, V
GS
= 0 V
(Note 1) V
(BR)DSX
I
D
= 10 mA, V
GS
= -20 V
V
th
V
DS
= 10 V, I
D
= 0.1 mA
I
D
= 2.0 A, V
GS
= 4.5 V
|Y
fs
|
V
DS
= 10 V, I
D
= 1.0 A
R
DS(ON)
I
D
= 4.0 A, V
GS
= 10 V
Note 1: If a reverse bias is applied between gate and source, this device enters V
(BR)DSX
mode. Note that the drain-
source breakdown voltage is lowered in this mode.
Note 2: Let V
th
be the voltage applied between gate and source that causes the drain current (I
D
) to below (0.1 mA for
this device). Then, for normal switching operation, V
GS(ON)
must be higher than V
th
, and V
GS(OFF)
must be
lower than V
th
. This relationship can be expressed as: V
GS(OFF)
< V
th
< V
GS(ON)
.
Take this into consideration when using the device.
Note 3: Pulse measurement.
25
5.2. Dynamic Characteristics (T
a
= 25
unless otherwise specified)(Q1,Q2 Common)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (turn-on time)
Switching time (turn-off time)
Symbol
C
iss
C
rss
C
oss
t
on
t
off
V
DD
= 15 V, I
D
= 0.5 A
V
GS
= 0 to 4.5 V, R
G
= 10
Ω,
Duty
≤
1%, Input: t
r
, t
f
< 5 ns
Ground source, See Chapter 5.3
Test Condition
V
DS
= 15 V, V
GS
= 0 V,
f = 1 MHz
Min
Typ.
280
20
53
15
12
Max
ns
Unit
pF
5.3. Switching Time Test Circuit
Fig. 5.3.1 Test Circuit of Switching Time
Fig. 5.3.2 Input Waveform/Output Waveform
25
5.4. Gate Charge Characteristics (T
a
= 25
unless otherwise specified)
(Q1,Q2 Common)
Characteristics
Total gate charge (gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Q
g
Q
gs1
Q
gd
Test Condition
V
DD
= 15 V, V
GS
= 4.5 V,
I
D
= 4.0 A
Min
Typ.
2.5
1.6
0.5
Max
Unit
nC
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2012-07-19
Rev.1.0
SSM6N55NU
5.5. Source-Drain Characteristics (T
a
= 25
unless otherwise specified)
25
(Q1,Q2 Common)
Characteristics
Diode forward voltage
(Note 1)
Symbol
V
DSF
Test Condition
I
D
= -4.0 A, V
GS
= 0 V
Min
Typ.
-0.85
Max
-1.2
Unit
V
Note 1: Pulse measurement.
6. Marking
Fig. 6.1 Marking
Fig. 6.2 Pin Condition(Top View)
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Rev.1.0
SSM6N55NU
7. Characteristics Curves (Note)
Fig. 7.1 I
D
- V
DS
Fig. 7.2 I
D
- V
GS
Fig. 7.3 R
DS(ON)
- V
GS
Fig. 7.4 R
DS(ON)
- V
GS
Fig. 7.5 R
DS(ON)
- I
D
Fig. 7.6 R
DS(ON)
- T
a
5
2012-07-19
Rev.1.0
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