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UM7512AE3

Description
Pin Diode, Silicon, HERMETIC SEALED PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size286KB,9 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

UM7512AE3 Overview

Pin Diode, Silicon, HERMETIC SEALED PACKAGE-2

UM7512AE3 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionHERMETIC SEALED PACKAGE-2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW DISTORTION, METALLURGICALLY BONDED
applicationATTENUATOR; SWITCHING
ConfigurationSINGLE
Maximum diode capacitance1 pF
Diode component materialsSILICON
Maximum diode forward resistance1 Ω
Diode typePIN DIODE
JESD-30 codeO-XEMW-N2
Minority carrier nominal lifetime3.5 µs
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeROUND
Package formMICROWAVE
Maximum power dissipation10 W
surface mountYES
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal formNO LEAD
Terminal locationEND
UM7500
POWER PIN DIODES
DESCRIPTION
The UM7500 series features Microsemi’s
innovative passivated chip design which
takes advantage of the latest silicon wafer
bonding and junction passivation
techniques. This new series of PIN diodes
incorporates all of the desirable RF
properties of previous Microsemi diodes
plus extremely low leakages and very stable
reverse characteristics. Power dissipation
capability is assured by Microsemi’s
metallurgically bonded, fused in glass
construction. This technique continues to be
the optimum approach for applications
requiring reliable, high power diodes.
Low leakage distortion is achieved by
maintaining high carrier lifetime and accurately
controlling I-region thickness throughout the
process. The UM7500 series is designed for use
in a broad range of RF and microwave switch and
attenuator circuits. The packages make this series
suitable for many high-end medical applications
such as MRI and CAT scan equipment. For
military applications, the new series is capable of
meeting all the requirements of MIL-STD-750
including HTRB screening at 80% of rated
voltage at 150
O
C.
KEY FEATURES
WWW .
Microsemi
.C
OM
Voltage Ratings to 1400 Volt
Fully Passivated PIN Chip
Low Leakage, IR < 0.5
µA
Void Less, Particle Free Construction
Hermetic Fused in Glass
Low Loss, Low Distortion
Surface Mount Package Available
Metallurgically Bonded, Thermally
Matched Construction
Compatible with automatic insertion
equipment
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Package
A
Condition
O
25 C Pin Temperature
PD
θ
APPLICATIONS/BENEFITS
Isolated stud package available
Surface mount package available
RoHS compliant packaging
available: use UMX7501B, etc.
10 W 15
O
C/W
5.5 W 27.5
O
C/W
1.5 W
10 W 15
O
C/W
7.5 W 20
O
C/W
7.5 W
20
O
C/W
35 kW
O
O
-65 C to + 175 C
B & E
½ in. total length to 25
O
C Contact
Free Air
O
C
25 C Stud Temperature
D
SM
All
O
25 C Stud Temperature
O
25 C End Cap Temperature
1 us pulse (Single)
OPERATING AND STORAGE
TEMPERATURE RANGE
VOLTAGE RATINGS
Reverse Voltage @ 0.5 uA
100V
200V
400V
600V
800V
1000V
1200V
1400V
UM7501
UM7502
UM7504
UM7506
UM7508
UM7510
UM7512
UM7514
UM7500
UM7500
Copyright
2005
Rev. 0, 2005-11-03
Microsemi
Page 1
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