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Datasheet> All Categories > semiconductor> Discrete semiconductor> RH1B
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RH1B

Description
0.6 A, 800 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size463KB，1 Pages
ManufacturerTAYCHIPST
Websitehttp://www.taychipst.com
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RH1B Overview

0.6 A, 800 V, SILICON, SIGNAL DIODE

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RC1/EH 1/RH 1 Series
200V-2000V
0.2A-0.6A
Fast-Recovery Rectifier Diodes
Absolute Maximum Ratings
Parameter
Type No.
V
RM
(V)
I
F (AV)
(A)
I
FSM
(A)
50Hz
Half-cycle Sinewave
Single Shot
Electrical Characteristics (Ta =25°C)
Tstg
(°C)
V
F
(V)
max
I
F
(A)
I
R
(µA)
V
R
=V
RM
max
I
R
(H)
(µA)
V
R
=V
RM
Ta =150°C max
Others
Tj
(°C)
t
rr
Œ
(µs)
I
F
/
I
RP
(mA)
t
rr

(µs)
I
F
/
I
RP
(mA)
Rth ( j - )
(°C/ W)
Mass
Fig.
(g)
RC 2
EH 1Z
EH 1
EH 1A
RH 1Z
RH 1
RH 1A
RH 1B
RH 1C
2000
200
400
600
200
400
600
800
1000
0.2
20
2.0
0.2
10
300
4.0
10/10
1.3
10/20
15
0.4
A
0.6
30
1.35
0.6
10
200
4.0
10/10
1.3
10/20
20
0.3
B
–40 to +150
0.6
35
1.3
0.6
5
70
4.0
10/10
1.3
10/20
15
0.4
A
RC 2 series
Ta —I
F(AV)
Derating
0.25
V
F
—I
F
Characteristics
(Typical)
Peak Forward Surge Current I
FSM
(A)
500
20
I
FMS
Rating
I
FSM
(A)
Average Forward Current I
F(AV)
(A)
Forward Current I
F
(A)
Ta
=1
30
ºC
10
0ºC
0.2
20ms
15
0.15
50
25º
100
C
10
0.1
5
0.05
10
5
0.6
0
0
25
50
75
100
125
Ambient Temperature Ta (°C)
150
0.8
1.2
1.4
1.6
1.0
Forward Voltage V
F
(V)
1.8
0
1
5
10
Overcurrent Cycles
50
EH 1 series
1.0
Ta —I
F(AV)
Derating
10
V
F
—I
F
Characteristics
(Typical)
Peak Forward Surge Current I
FSM
(A)
30
I
FMS
Rating
I
FSM
(A)
Average Forward Current I
F(AV)
(A)
Forward Current I
F
(A)
0.8
20ms
1
20
0.6
0.1
0.4
0.01
0.2
Ta = 100ºC
60ºC
25ºC
0.5
1.0
Forward Voltage V
F
(V)
1.5
10
0
0
25
50
75
100
125
Ambient Temperature Ta (°C)
150
0.001
0.2
0
1
5
10
Overcurrent Cycles
50
RH 1 series
Peak Forward Surge Current I
FSM
(A)
1.0
Ta —I
F(AV)
Derating
5.0
V
F
—I
F
Characteristics
(Typical)
35
30
25
20
15
10
5
I
FMS
Rating
I
FSM
(A)
Average Forward Current I
F(AV)
(A)
Ta
=1
30
ºC
10
0º
C
Forward Current I
F
(A)
0.8
20ms
0.6
0.5
0.4
0.2
0.1
0.05
0.5
0
25º
1.0
C
0
25
50
75
100
125
Ambient Temperature Ta (°C)
150
0.6
0.7
0.8
0.9
1.0
Forward Voltage V
F
(V)
1.1
0
1
5
10
Overcurrent Cycles
50
External Dimensions
(Unit: mm)
Flammability:
UL94V-0 or Equivalent
Fig.
A
Fig.
B
E-mail: sales@taychipst.com
1 of 1
Web Site: www.taychipst.com

RH1B Related Products

RH1B EH1 EH1A EH1Z RC2 RH1 RH1C RH1Z
Description 0.6 A, 800 V, SILICON, SIGNAL DIODE 0.6 A, 400 V, SILICON, SIGNAL DIODE 0.6 A, 600 V, SILICON, SIGNAL DIODE 0.6 A, 200 V, SILICON, SIGNAL DIODE 0.2 A, 2000 V, SILICON, SIGNAL DIODE 0.6 A, 400 V, SILICON, SIGNAL DIODE 0.6 A, 1000 V, SILICON, SIGNAL DIODE 0.6 A, 200 V, SILICON, SIGNAL DIODE

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