TC7SG86FE
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SG86FE
2-Input EXCLUSIVE OR Gate
Features
High output current
Super high speed operation
: ±8 mA (min) at V
CC
= 3 V
: t
pd
= 2.6 ns (typ.)
at V
CC
= 3.3 V, 15pF
Operating voltage range: V
CC
= 0.9 to 3.6 V
5.5-V tolerant inputs.
3.6-V power down protection output.
Weight: 3.0 mg (typ.)
(ESV)
Marking
Product name
W
8
Absolute Maximum Ratings
(Ta
½
25°C)
Characteristic
Supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Rating
−0.5
to 4.6
−0.5
to 7.0
−0.5
to 4.6 (Note 1)
−0.5
to V
CC
+ 0.5 (Note 2)
−20
−20
±25
±50
150
−65
to 150
(Note
3)
Unit
V
V
V
mA
mA
mA
mA
mW
°C
Pin Assignment
(top view)
IN B
1
5
V
CC
IN A
2
GND
3
4
OUT Y
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: V
CC
= 0V
Note 2: High or Low state. Do not exceed I
OUT
of absolute maximum ratings.
Note 3: V
OUT
< GND
Note:
1
2009-07-09
TC7SG86FE
AC Characteristics
(unless otherwise specified, Input: t
r
½
t
f
½
3 ns)
Characteristics
Symbol
Test Condition
Ta
½
25°C
V
CC
(V)
0.9
1.1 to 1.3
C
L
½
10 pF,
R
L
½
1 M
1.4 to 1.6
1.65 to
1.95
2.3 to 2.7
3.0 to 3.6
0.9
1.1 to 1.3
Propagation delay time
t
PLH
t
PHL
C
L
½
15 pF,
R
L
½
1 M
1.4 to 1.6
1.65 to
1.95
2.3 to 2.7
3.0 to 3.6
0.9
1.1 to 1.3
C
L
½
30 pF,
R
L
½
1 M
1.4 to 1.6
1.65 to
1.95
2.3 to 2.7
3.0 to 3.6
Input capacitance
Power dissipation capacitance
C
IN
C
PD
3.6
Min
Typ.
23.0
11.7
6.7
5.1
3.4
2.7
23.7
11.9
6.7
5.1
3.4
2.7
32.1
15.7
8.7
6.5
4.2
3.4
3
9
Max
20.9
10.0
6.6
4.1
3.3
22.8
9.9
7.3
4.7
3.6
31.4
13.9
9.8
6.0
4.7
Ta
½ 40
to 85°C
Min
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Max
39.1
11.8
7.6
4.7
3.9
39.4
11.9
ns
7.5
5.3
4.1
59.4
16.9
10.2
6.5
5.1
pF
pF
Unit
(Note 13) 0.9 to 3.6
Note 13: C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
CC (opr.)
½
C
PD
½V
CC
½f
IN
I
CC
4
2009-07-09
NXP MCU
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