TC7SU04F/FU
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC7SU04F,TC7SU04FU
Inverter
The TC7SU04 is a high speed C
2
MOS Inverter fabricated with
silicon gate C
2
MOS technology.
It achieves high speed operation similar to equivalent LSTTL
while maintaining the C
2
MOS low power dissipation.
The internal circuit is composed of single stages inverter, it can
be applied for crystal oscillation.
The input is equipped with protection circuits against static
discharge or transient excess voltage.
Output currents are 1/2 compared to TC74HC series models.
TC7SU04F
Features
•
•
•
•
•
•
•
High speed: t
pd
=
7 ns (typ.) at V
CC
=
5 V
Low power dissipation: I
CC
=
1
μA
(max) at Ta
=
25°C
High noise immunity: V
NIH
=
V
NIL
=
28% V
CC
(min)
Output drive capability: 5 LSTTL loads
Symmetrical output impedance: |I
OH
|
=
I
OL
=
2 mA (min)
Balanced propagation delay time: t
pLH
∼
t
pHL
−
Wide operating voltage range: V
CC
(opr)
=
2 to 6 V
TC7SU04FU
Weight
SSOP5-P-0.95: 0.016 g (typ.)
SSOP5-P-0.65A: 0.006 g (typ.)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/ground current
Power dissipation
Storage temperature range
Lead temperature (10 s)
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
T
L
Rating
−0.5
to 5
−0.5
to V
CC
+
0.5
−0.5
to V
CC
+
0.5
±20
±20
±12.5
±25
200
−65
to 150
260
Unit
V
V
V
mA
mA
mA
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-09-30
TC7SU04F/FU
AC Electrical Characteristics
(C
L
=
50 pF, input t
r
=
t
f
=
6 ns)
Characteristics
Symbol
Test Condition
V
CC
(V)
2.0
Output transition time
t
TLH
t
THL
⎯
4.5
6.0
2.0
Propagation delay time
t
pLH
t
pHL
C
IN
C
PD
⎯
4.5
6.0
⎯
(Note)
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Ta
=
25°C
Typ.
50
14
12
48
12
9
5
10
Max
125
25
21
100
20
17
10
⎯
Ta
= −40
to 85°C
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
155
31
26
125
25
21
10
⎯
pF
pF
ns
ns
Unit
Input capacitance
Power dissipation
capacitance
Note: C
PD
defined as the value of internal equivalent capacitance of IC which is calculated from the operating current
consumption without load (refer to test circuit).
Average operating current can be obtained by the equation hereunder.
I
CC (opr)
=
C
PD
• V
CC
• f
IN
+
I
CC
Switching Characteristics Test Circuit
V
CC
90%
P.G.
V
IN
50
Ω
V
OUT
V
IN
50%
10%
C
L
V
OUT
t
pHL
90%
50%
10%
t
THL
t
TLH
6 ns
6 ns
90%
50%
10%
t
pLH
90%
50%
10%
V
OL
GND
V
OH
V
CC
I
CC (opr)
Test Circuit
V
CC
=
5 V
A
P.G.
50
Ω
Input waveform is the same as that in
case of switching characteristics test.
4
2009-09-30
Microchip MCU
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