HYS64T64020KM-3.7-A datasheet, PDF

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HYS64T64020KM-3.7-A: DescriptionDDR DRAM Module, 64MX64, 0.5ns, CMOS, PDMA214; Categorystorage storage; File Size910KB，31 Pages; ManufacturerQIMONDA

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HYS64T64020KM-3.7-A Overview

DDR DRAM Module, 64MX64, 0.5ns, CMOS, PDMA214

HYS64T64020KM-3.7-A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	QIMONDA
package instruction	DIMM, DIMM214,16
Reach Compliance Code	unknown
Maximum access time	0.5 ns
Maximum clock frequency (fCLK)	267 MHz
I/O type	COMMON
JESD-30 code	R-PDMA-N214
memory density	4294967296 bit
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of terminals	214
word count	67108864 words
character code	64000000
Maximum operating temperature	65 °C
Minimum operating temperature
organize	64MX64
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIMM
Encapsulate equivalent code	DIMM214,16
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum standby current	0.032 A
Maximum slew rate	0.896 mA
Nominal supply voltage (Vsup)	1.8 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.4 mm
Terminal location	DUAL

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D at a S he et , Rev. 0.6, J un e 2 00 4

HYS64T32000[H/K/L]M–[3.7/5]–A

HYS64T64020[H/K/L]M–[3.7/5]–A

M e m or y P r o du c t s

eli

N e v e r

s t o p

t h i n k i n g .

DDR2 MDIMM

Double-Data-Rate-Two SDRAM Micro-DIMM

HYS64T[3200/6402]0[H/K/L]M–[3.7/5]–A

Double-Data-Rate-Two SDRAM Micro-DIMM

Preliminary

Table of Contents

1.1

1.2

1.3

3.1

4.1

4.2

Overview

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Block Diagrams

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Electrical Characteristics

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Specifications and Conditions

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

ODT (On Die Termination) Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Electrical Characteristics & AC Timings

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

SPD Codes

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Package Outlines

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Product Type Nomenclature (DDR2 DRAMs and DIMMs)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Data Sheet

Rev. 0.6, 2004-06

03242004-2CBE-IJ2X

HYS64T64020KM-3.7-A Related Products

	HYS64T64020KM-3.7-A	HYS64T32000KM-3.7-A	HYS64T64020KM-5-A	HYS64T64020LM-3.7-A
Description	DDR DRAM Module, 64MX64, 0.5ns, CMOS, PDMA214	DDR DRAM Module, 32MX64, 0.5ns, CMOS, PDMA214	DDR DRAM Module, 64MX64, 0.6ns, CMOS, PDMA214	DDR DRAM Module, 64MX64, 0.5ns, CMOS, PDMA214
Is it Rohs certified?	incompatible	incompatible	incompatible	conform to
package instruction	DIMM, DIMM214,16	DIMM, DIMM214,16	DIMM, DIMM214,16	DIMM, DIMM214,16
Reach Compliance Code	unknown	unknown	unknown	unknown
Maximum access time	0.5 ns	0.5 ns	0.6 ns	0.5 ns
Maximum clock frequency (fCLK)	267 MHz	266 MHz	200 MHz	267 MHz
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDMA-N214	R-PDMA-N214	R-PDMA-N214	R-PDMA-N214
memory density	4294967296 bit	2147483648 bit	4294967296 bit	4294967296 bit
Memory IC Type	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
memory width	64	64	64	64
Number of terminals	214	214	214	214
word count	67108864 words	33554432 words	67108864 words	67108864 words
character code	64000000	32000000	64000000	64000000
Maximum operating temperature	65 °C	65 °C	65 °C	65 °C
organize	64MX64	32MX64	64MX64	64MX64
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM214,16	DIMM214,16	DIMM214,16	DIMM214,16
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	1.8 V	1.8 V	1.8 V	1.8 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192
Maximum slew rate	0.896 mA	0.88 mA	0.856 mA	0.896 mA
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	0.4 mm	0.4 mm	0.4 mm	0.4 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
Maker	QIMONDA	-	QIMONDA	QIMONDA
Maximum standby current	0.032 A	-	0.032 A	0.032 A

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