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FUF4004

Description
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size3MB,2 Pages
ManufacturerTAYCHIPST
Websitehttp://www.taychipst.com
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FUF4004 Overview

1 A, 400 V, SILICON, SIGNAL DIODE, DO-41

FUF4001 THRU FUF4007
Glass Passivated Ultrafast Recovery Rectifier
50V-1000V
1.0A
FEATURES
PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY
FLAMMABILITY CLASSIFICATION 94V-0
ULTRA FAST RECOVERY TIMES FOR HIGH EFFICIENCY
LOW FORWARD VOLTAGE, HIGH CURRENT CAPABILITY
LOW LEAKAGE
HIGH SURGE CAPABILITY
HIGH TEMPERATURE SOLDERING GUARANTEED:
260°C 0.375” (9.5mm) LEAD LENGTHS FOR 10 SECONDS AT
5 LBS.(2.3KG)TENSION
Mechanical Data
CASE: MOLDED PLASTIC, DO41, DIMENSIONS
IN INCHES AND (MILLIMETERS)
TERMINALS: AXIAL LEADS SOLDERABLE PER MIL-STD-
202, METHOD 208
POLARITY: COLOR BAND DENOTES CATHODE END
MOUNTING POSITION: ANY
WEIGHT: 0.34 GRAMS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Ratings
FUF 4001 FUF 4002 FUF 4003 FUF 4004 FUF 4005 FUF 4006 FUF 4007
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
t
rr
C
j
T
j
T
stg
E
RSM
Peak Recurrent reverse voltage (V)
Maximum RMS voltage
Maximum DC blocking voltage
Forward current at Tamb = 55 °C
Recurrent peak forward surge current
8.3 ms. peak forward surge current
(Jedec Method)
50
35
50
100
70
100
200
140
200
400
600
800
560
800
1000
700
1000
280 420
400 600
1A
10 A
30 A
Max. reverse recovery time from
I
F
= 0.5 A ; I
R
= 1 A ; I
RR
= 0.25 A
Typical Junction Capacitance at 1 MHz
and reverse voltaje of 4V
DC
Operating temperature range
Storage temperature range
Maximum non repetitive peak
reverse avalanche energy.
I
R
= 0.5A ; T
J
= 25 ºC
Max. forward voltage drop at I
F
= 1 A
Max. reverse current at V
RRM
at 25 ºC
Max. thermal resistance ( l = 10 mm.)
1 of 2
50 ns
15 pF
– 65 to + 150 °C
– 65 to + 150 °C
20 mJ
75 ns
Electrical Characteristics at Tamb = 25 °C
V
F
I
R
R
thj-a
1.3 V
5µA
50 °C/W
Web Site: www.taychipst.com
1.7 V
E-mail: sales@taychipst.com

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FUF4004 FUF4001 FUF4002 FUF4003 FUF4005 FUF4006 FUF4007
Description 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
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