NXP Semiconductors
Product specification
Low-voltage variable capacitance
double diode
FEATURES
Excellent linearity
C1: 95 pF; C7.5: 27.6 pF
C1 to C7.5 ratio: min. 3.1
Very low series resistance
Small plastic SMD package.
APPLICATIONS
Electronic tuning in FM-radio
Voltage Controlled Oscillators (VCO).
DESCRIPTION
The BB201 is a variable capacitance double diode with a
common cathode, fabricated in silicon planar technology
and encapsulated in the SOT23 small plastic SMD
package.
MARKING
TYPE NUMBER
BB201
MARKING CODE
SCp
handbook, halfpage
BB201
PINNING
PIN
1
2
3
anode (a
1
)
anode (a
2
)
common cathode
DESCRIPTION
3
3
1
2
1
2
MAM169
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current
storage temperature range
operating junction temperature
55
55
15
20
+125
+125
V
mA
C
C
PARAMETER
MIN.
MAX.
UNIT
2001 Oct 12
2
NXP Semiconductors
Product specification
Low-voltage variable capacitance double
diode
CHARACTERISTICS
T
j
= 25
C
unless otherwise specified.
SYMBOL
Per diode
I
R
r
S
C
d
reverse current
diode series resistance
diode capacitance
V
R
= 15 V
V
R
= 15 V; T
j
= 85
C
f = 100 MHz; V
R
= 3 V
V
R
= 1 V; f = 1 MHz
V
R
= 3 V; f = 1 MHz
V
R
= 7.5 V; f = 1 MHz
V
R
= 8 V; f = 1 MHz
C
d
1V
-------------------
-
C
d
7.5V
capacitance ratio
f = 1 MHz
89
25.5
3.1
0.25
95
60
27.6
25.5
10
200
0.5
102
29.7
3.8
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
BB201
UNIT
nA
nA
pF
pF
pF
pF
GRAPHICAL DATA
handbook, full pagewidth
140
Cd
(pF)
120
MGU477
100
80
60
40
20
0
10
−1
1
10
VR (V)
10
2
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
2001 Oct 12
3
NXP Semiconductors
Product specification
Low-voltage variable capacitance double
diode
BB201
10
3
handbook, halfpage
IR
(nA)
MGU478
10
−3
handbook, halfpage
TCd
(K
−1
)
MGU479
10
2
10
−4
10
1
0
20
40
60
80
Tj (°C)
100
10
−5
10
−1
1
10
VR (V)
10
2
Fig.4
Fig.3
Reverse current as a function of junction
temperature; maximum values.
Temperature coefficient of diode
capacitance as a function of reverse
voltage; typical values.
2001 Oct 12
4
NXP Semiconductors
Product specification
Low-voltage variable capacitance double
diode
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
BB201
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2001 Oct 12
5
Embedded System
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