JMnic
Product Specification
Silicon PNP Power Transistors
2SA1513
DESCRIPTION
・With
TO-3PML package
・High
current capability
・Low
collector saturation voltage
APPLICATIONS
・For
high speed and high power
switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
DESCRIPTION
・
Maximum absolute ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
60
150
-55~150
℃
℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-100
-60
-6
-15
3.5
W
UNIT
V
V
V
A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA1513
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-25mA; I
B
=0
-60
V
V
(BR)EBO
V
CEsat
Emitter-base breakdown voltage
I
E
=-1mA; I
C
=0
I
C
=-12 A;I
B
=-0.6 A
-6
V
Collector-emitter saturation voltage
-0.5
V
V
BEsat
Base-emitter saturation voltage
I
C
=-12 A;I
B
=-0.6 A
-1.5
V
μA
μA
I
CBO
Collector cut-off current
V
CB
=-60V; I
E
=0
-10
I
EBO
Emitter cut-off current
V
EB
=-6V; I
C
=0
-10
h
FE
DC current gain
I
C
=-3A ; V
CE
=-2V
100
400
C
OB
f
T
Output capacitance
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=-1.5A ; V
CE
=-10V
300
pF
Transition frequency
80
MHz
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1513
Fig.2 Outline dimensions
3