4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
SST1LP124.9-5.8 GHz High-Linearity Power Amplifier
Preliminary Specifications
FEATURES:
•
High Gain:
– Typically 35 dB gain across 4.9-5.8 GHz over
temperature 0°C to +85°C
High linear output power:
– ~28 dBm P1dB (Pulsed single-tone signal)
– Meet 802.11a OFDM ACPR requirement up to
23+ dBm over ~ entire band
– Added EVM~4% up to 21 dBm for
54 Mbps 802.11a signal
High power-added efficiency/Low operating
current for 54 Mbps 802.11a applications
– ~12% @ P
OUT
= 21 dBm for 54 Mbps
Built-in Ultra-low I
REF
power-up/down control
– I
REF
<3 mA
Low idle current
– ~130 mA I
CQ
High speed power up/down
– Turn on/off time (10%~90%) <100 ns
– Typical power-up/down delay with driver delay
included <200 ns
• High temperature stability
– ~1.5/1.0 dB gain/power variation between
0°C to +85°C
– ~1 dB detector variation over 0°C to +85°C
• Low shut-down current (< 0.1 µA)
• On-chip power detection
• 20 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 16-contact VQFN (3mm x 3mm)
– Non-Pb (lead-free) packages available
•
•
•
•
•
APPLICATIONS:
•
•
•
•
WLAN (IEEE 802.11a)
Japan WLAN
HyperLAN2
Multimedia
PRODUCT DESCRIPTION
The SST11LP12 is a high-power, high-gain power amplifier
based on the highly-reliable InGaP/GaAs HBT technology.
The SST11LP12 can be easily configured for high-power,
high-efficiency applications with superb power-added effi-
ciency while operating over the entire 802.11a frequency
band for U.S., European, and Japanese markets (4.9-5.8
GHz). It typically provides 35 dB gain with 16% power-
added efficiency @ P
OUT
= 23 dBm.
The SST11LP12 has excellent linearity, typically ~4%
added EVM at 21 dBm output power which is essential for
54 Mbps 802.11g operation while meeting 802.11g spec-
trum mask at 23+ dBm. SST11LP12 also has wide-range
(>20 dB), temperature-stable (~1 dB over 85°C), single-
ended/differential power detectors which lower users’ cost
on power control.
The power amplifier IC also features easy board-level
usage along with high-speed power-up/down control. Ultra-
low reference current (total I
REF
<3 mA) makes the
SST11LP12 controllable by an on/off switching signal
directly from the baseband chip. These features coupled
with low operating current make the SST11LP12 ideal for
the final stage power amplification in battery-powered
802.11a WLAN transmitter and access point applications.
The SST11LP12 is offered in 16-contact VQFN package.
See Figure 1 for pin assignments and Table 1 for pin
descriptions.
©2005 SST Communications Corp.
S71278-00-000
1/05
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
Preliminary Specifications
FUNCTIONAL BLOCKS
F
UNCTIONAL
B
LOCK
D
IAGRAM
VCC1
VCC2
VCC3
14
NC
13
12 NC
11 RFOUT
10 RFOUT
Bias Circuit
5
NC
6
VREF1
7
VREF2
8
Det_ref
1278 B1.1
16
NC
RFIN
RFIN
VCCb
1
2
3
4
15
9
Det
©2005 SST Communications Corp.
S71278-00-000
1/05
2
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
Preliminary Specifications
PIN ASSIGNMENTS
VCC1
VCC2
VCC3
14
16
NC
RFIN
RFIN
VCCb
1
2
3
4
15
NC
13
12 NC
11 RFOUT
10 RFOUT
9 Det
8
Det_ref
1278 16-vqfn P1.0
Top View
(contacts facing down)
RF and DC GND
0
5
NC
6
VREF1
7
VREF2
FIGURE 1: P
IN
A
SSIGNMENTS FOR
16-
CONTACT
VQFN
PIN DESCRIPTIONS
TABLE 1: P
IN
D
ESCRIPTION
Symbol
GND
NC
RFIN
RFIN
VCCb
NC
VREF1
VREF2
Det_ref
Det
RFOUT
RFOUT
NC
NC
VCC3
VCC2
VCC1
1. I=Input, O=Output
Pin No.
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Pin Name
Ground
No Connection
Type
1
Function
The center pad should be connected to RF ground
with several low inductance, low resistance vias.
Unconnected pins
I
I
Power Supply
No Connection
PWR
PWR
O
O
O
O
No Connection
No Connection
Power Supply
Power Supply
Power Supply
PWR
PWR
PWR
PWR
RF input, DC decoupled
RF input, DC decoupled
Supply voltage for bias circuit
Unconnected pins.
1st and 2nd stage current control
3rd stage current control
On-chip power detector reference
On-chip power detector
RF output
RF output
Unconnected pins.
Unconnected pins.
Power supply, 3rd stage
Power supply, 2nd stage
Power supply, 1st stage
T1.0 1278
©2005 SST Communications Corp.
3
S71278-00-000
1/05
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
Preliminary Specifications
ELECTRICAL SPECIFICATIONS
The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current spec-
ifications. Refer to Figures 2 through 10 for the RF performance.
Absolute Maximum Stress Ratings
(Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Supply Voltage at pins 4, 14, 15, 16 (V
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +5.5V
DC supply current (I
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
Operating Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (T
STG
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Surface Mount Solder Reflow Temperature: . . . . . . . . . . . . . . . . . . . . . . . . . “with-Pb” units
1
: 240°C for 3 seconds
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . “non-Pb” units: 260°C for 3 seconds
1. Certain “with-Pb” package types are capable of 260°C for 3 seconds; please consult the factory for the latest information.
O
PERATING
R
ANGE
Range
Industrial
Ambient Temp
-40°C to +85°C
V
CC
3.3V
TABLE 2: DC E
LECTRICAL
C
HARACTERISTICS
Symbol
V
CC
I
CC
I
CQ
I
OFF
V
REG
Parameter
Supply Voltage at pins 4, 14, 15, 16
Supply Current @ P
OUT
= 23 dBm at V
CC
= 3.3V
V
CC
quiescent current
Shut down current
Reference Voltage for recommended application
130
<1.0
2.85
Min.
2.7
Typ
3.3
Max.
3.6
400
Unit
V
mA
mA
µA
V
T2.0 1278
Test Conditions
©2005 SST Communications Corp.
S71278-00-000
1/05
4
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
Preliminary Specifications
TABLE 3: AC E
LECTRICAL
C
HARACTERISTICS FOR
C
ONFIGURATION
Symbol
F
L-U
Parameter
Frequency range
Output power with 4% EVM at
54 Mbps OFDM signal when operating at 3.3V V
CC
Output power level with 802.11a mask compliance
across 4.9-5.8 GHz
Linear gain across 4.9~5.8GHz
Gain variation over band (4.9-5.8 MHz)
G
VAR
Gain variation over band (4.9-5.35 MHz)
Gain variation over band (5.7-5.8 MHz)
Gain variation over channel (20 MHz)
Det
Det_ref
S
Stability
Power detector output voltage range
Power detector output reference
Power detector sensitivity
Spurious output@ 25.5 dBm
54 Mbps OFDM signal when VSWR = 6:1 all angle
10
-40
0.5
0.5
0.6
0.03
-60
0.2
2.0
23
32
3
1.5
1
Min
4.9
21
Typ
Max
5.8
Unit
GHz
dBm
dBm
dB
dB
dB
dB
dB
V
V
V/dB
dBc
second
dBc
T3.0 1278
Linearity
G
Output VSWR Survivable time@ 25.5 dBm (to 50Ω)
Ruggedness 54 Mbps OFDM signal when VSWR = 10:1 all angle
2f, 3f, 4f, 5f
Harmonics at 22 dBm, without trapping capacitors
©2005 SST Communications Corp.
S71278-00-000
1/05
5
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