Shenzhen SI Semiconductors Co., LTD.
Product Specification
D
:
FEATURES
/ D SERIES TRANSISTORS
RoHS
BLD128DA
■
HIGH VOLTAGE CAPABILITY
■
HIGH SPEED SWITCHING
■
WIDE SOA
■
RoHS COMPLIANT
■
ELECTRONIC BALLAST
■
ELECTRONIC TRANSFORMER
:
APPLICATION:
■
FLUORESCENT LAMP
■
SWITCH MODE POWER SUPPLY
Tc=25°C
°
Absolute Maximum Ratings Tc=25°C
°
PARAMETER
-
Collector-Base Voltage
-
Collector-Emitter Voltage
-
Emitter- Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
TO-220/TO-220S
VALUE
700
400
9
3.5
65
150
-65-150
UNIT
V
V
V
A
W
°C
°C
Tc=25°C
°
Electronic Characteristics
Tc=25°C
°
SYMBOL
I
CBO
I
CEO
V
CEO
V
EBO
Vcesat
Vbesat
TEST CONDITION
V
CB
=700V
V
CE
=400V,I
B
=0
I
C
=10mA,I
B
=0
I
E
=1mA,I
C
=0
I
C
=1.0A,I
B
=0.2A
I
C
=2A,I
B
=0.5A
I
C
=1.0A,I
B
=0.2A
V
CE
=5V,I
C
=10mA
7
10
5
2.0
4.0
0.8
1.7
V
µs
40
400
9
0.5
1.0
1.5
V
V
MIN
MAX
100
250
UNIT
µA
µA
V
V
CHARACTERISTICS
-
Collector-Base Cutoff Current
-
Collector-Emitter Cutoff Current
-
Collector-Emitter Voltage
-
Emitter- Base Voltage
-
Collector-Emitter Saturation Voltage
-
Base-Emitter Saturation Voltage
DC Current Gain
h
FE
V
CE
=5V,I
C
=1.0A
Vce=5V,Ic=3.5A
Storage Time
Falling Time
Diode Forward Voltage
t
S
t
f
V
F
V
CC
=5V,I
C
=0.5A,
(UI9600)
I
F
=2A
1
Si semiconductors
2011.05
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