SI4884DYD84Z datasheet, PDF - EEWORLD Datasheet

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SI4884DYD84Z: DescriptionSmall Signal Field-Effect Transistor, 11.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8; CategoryDiscrete semiconductor The transistor; File Size230KB，8 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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SI4884DYD84Z Overview

Small Signal Field-Effect Transistor, 11.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

SI4884DYD84Z Parametric

Parameter Name	Attribute value
Maker	Fairchild
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	11.5 A
Maximum drain-source on-resistance	0.01 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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January 2001

Si4884DY

Single N-Channel Logic Level PWM Optimized PowerTrench

MOSFET

General Description

This N-Channel Logic Level MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

The MOSFET features faster switching and lower gate

charge than other MOSFETs with comparable R

DS(ON)

specifications.

The result is a MOSFET that is easy and safer to drive (even

at very high frequencies), and DC/DC power supply designs

with higher overall efficiency.

Features

11.5 A, 30 V. R

DS(ON)

= 0.010

Ω

@ V

= 10 V

DS(ON)

= 0.015

Ω

@ V

= 4.5 V.

Optimized for use in switching DC/DC converters with

PWM controllers.

Very fast switching.

Low gate charge (typical Qg = 19 nC).

SOT-23

SuperSOT

-6

SuperSOT

-8

SO-8

SOT-223

SOIC-16

SO-8

Absolute Maximum Ratings

Symbol

Parameter

= 25

C unless other wise noted

Si4884DY

Units

DSS

GSS

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1a)

±20

11.5

2.5

1.2

-55 to 150

STG

Operating and Storage Temperature Range

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

°C/W

Si4884DY Rev.A

SI4884DYD84Z Related Products

	SI4884DYD84Z	SI4884DYF011	SI4884DYL86Z
Description	Small Signal Field-Effect Transistor, 11.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8	Small Signal Field-Effect Transistor, 11.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8	Small Signal Field-Effect Transistor, 11.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
Maker	Fairchild	Fairchild	Fairchild
Parts packaging code	SOT	SOT	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8
Contacts	8	8	8
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V	30 V
Maximum drain current (ID)	11.5 A	11.5 A	11.5 A
Maximum drain-source on-resistance	0.01 Ω	0.01 Ω	0.01 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8
Number of components	1	1	1
Number of terminals	8	8	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON

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