SFR9214 datasheet, PDF - EEWORLD Datasheet

SFR9214: DescriptionPower Field-Effect Transistor, 1.53A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3; CategoryDiscrete semiconductor The transistor; File Size174KB，6 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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SFR9214 Overview

Power Field-Effect Transistor, 1.53A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

Parameter Name	Attribute value
Maker	SAMSUNG
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	102 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V
Maximum drain current (Abs) (ID)	1.5 A
Maximum drain current (ID)	1.53 A
Maximum drain-source on-resistance	4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	19 W
Maximum pulsed drain current (IDM)	6.1 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Transistor component materials	SILICON

	SFR9214	SFU9214
Description	Power Field-Effect Transistor, 1.53A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3	Power Field-Effect Transistor, 1.53A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
Maker	SAMSUNG	SAMSUNG
package instruction	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	102 mJ	102 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V	250 V
Maximum drain current (Abs) (ID)	1.5 A	1.5 A
Maximum drain current (ID)	1.53 A	1.53 A
Maximum drain-source on-resistance	4 Ω	4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSIP-T3
Number of components	1	1
Number of terminals	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	19 W	19 W
Maximum pulsed drain current (IDM)	6.1 A	6.1 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal form	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON

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