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NTP5860NL

Description
130 A, 60 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size117KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

NTP5860NL Overview

130 A, 60 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

NTP5860NL Parametric

Parameter NameAttribute value
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Manufacturer packaging codeCASE 418B-04
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)800 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)130 A
Maximum drain-source on-resistance0.0034 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)520 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
NTB5860NL, NTP5860NL,
NVB5860NL
N-Channel Power MOSFET
60 V, 220 A, 3.0 mW
Features
http://onsemi.com
V
(BR)DSS
60 V
R
DS(on)
MAX
3.0 mW @ 10 V
3.6 mW @ 4.5 V
D
I
D
MAX
220 A
Low R
DS(on)
High Current Capability
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free and are RoHS Compliant
NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
MAXIMUM RATINGS
(T
J
= 25°C Unless otherwise specified)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous
Continuous Drain
Current, R
qJC
Power Dissipation,
R
qJC
Pulsed Drain Current
Current Limited by Package
Operating and Storage Temperature Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.3 mH)
Lead Temperature for Soldering
Purposes (1/8″ from Case for 10 Seconds)
Steady
State
Steady
State
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
P
D
I
DM
I
DMmax
T
J
, T
stg
I
S
E
AS
T
L
Symbol
V
DSS
V
GS
I
D
Value
60
$20
220
156
283
660
130
−55
to
+175
130
735
260
W
A
A
°C
A
mJ
°C
1
2
TO−220AB
CASE 221A
STYLE 5
1
2
3
D
2
PAK
CASE 418B
STYLE 2
4
Unit
V
V
A
4
S
N−CHANNEL MOSFET
G
t
p
= 10
ms
3
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Case (Drain) Steady State
Junction−to−Ambient
Steady State (Note 1)
Symbol
R
qJC
R
qJA
Max
0.53
28
1
Gate
2
Drain
G
A
Y
WW
Unit
°C/W
NTP
5860NLG
AYWW
3
Source
1
Gate
NTB
5860NLG
AYWW
2
Drain
3
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
= Pb−Free Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
Augsut, 2012
Rev. 1
1
Publication Order Number:
NTB5860NL/D

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Description 130 A, 60 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 130 A, 60 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 130 A, 60 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 130 A, 60 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Shell connection DRAIN DRAIN DRAIN DRAIN
Number of components 1 1 1 1
Number of terminals 3 3 2 3
surface mount NO NO YES NO
Terminal form THROUGH-HOLE THROUGH-HOLE GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Transistor component materials SILICON SILICON SILICON SILICON
Maximum operating temperature - 175 Cel 175 °C 175 Cel
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