NTTFS3A08P
Product Preview
Power MOSFET
Features
−20
V,
−14
A, Single P−Channel,
m8FL
•
Ultra Low R
DS(on)
to Minimize Conduction Losses
•
m8FL
3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal
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V
(BR)DSS
−20
V
R
DS(on)
MAX
6.7 mW @
−4.5
V
9.0 mW @
−2.5
V
P−Channel MOSFET
I
D
MAX
−14
A
Conduction
•
ESD Protection Level of 5 kV per JESD22−A114
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•
Battery/Switch
•
High Side Load Switch
•
Optimized for Power Management Applications for Portable
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation R
qJA
(Note 1)
Continuous Drain
Current R
qJA
≤
10 s
(Note 1)
Power Dissipation
R
qJA
≤
10 s (Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Pulsed Drain Current
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
Steady
State
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C, t
p
= 10
ms
P
D
I
DM
T
J
,
T
stg
V
ESD
I
S
T
L
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
20
±8
−14
−10
2.2
−20
−15
4.5
−9
−6
0.84
−43
−55
to
+150
5000
−6
260
Products such as Media Tablets, Ultrabook PCs and Cellphones
Unit
V
V
A
1
G
D
MARKING DIAGRAM
1
WDFN8
(m8FL)
CASE 511AB
XXXX
A
Y
WW
G
S
S
S
G
XXXX
AYWWG
G
D
D
D
D
W
A
W
A
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
W
A
°C
V
A
°C
ORDERING INFORMATION
Device
NTTFS3A08PTAG
NTTFS3A08PTWG
Package
WDFN8
(Pb−Free)
WDFN8
(Pb−Free)
Shipping
†
1500 / Tape &
Reel
1500 / Tape &
Reel
Operating Junction and Storage Temperature
ESD (HBM, JESD22−A114)
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
June, 2012
−
Rev. P0
1
Publication Order Number:
NTTFS3A08P/D
NTTFS3A08P
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t
≤
10 s) (Note 3)
Symbol
R
qJA
R
qJA
R
qJA
Value
56.5
147.6
27.5
Unit
°C/W
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm
2
, 1 oz. Cu).
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
=
−6
A
V
GS
= 0 V,
I
S
=
−6
A
V
GS
=
−4.5
V, V
DS
=
−10
V,
I
D
=
−8
A, R
G
= 6.0
W
V
GS
=
−4.5
V, V
DS
=
−10
V, I
D
=
−8
A
V
GS
= 0 V, f = 1.0 MHz, V
DS
=
−10
V
V
GS
=
−4.5
V
V
GS
=
−2.5
V
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
T
J
= 25°C
−0.7
207
45
162
234
nC
−1.0
V
ns
12
56
250
165
ns
5000
600
500
54.0
2.0
6.5
14.0
nC
pF
I
D
=
−12
A
I
D
=
−10
A
V
GS
= V
DS
, I
D
=
−250
mA
−0.4
TBD
4.9
6.9
TBD
6.7
9.0
S
−1.0
V
mV/°C
mW
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V,
V
DS
=
−16
V
T
J
= 25°C
V
GS
= 0 V, I
D
= 250
mA
−20
TBD
−1
±5
V
mV/°C
mA
mA
Symbol
Test Condition
Min
Typ
Max
Unit
V
DS
= 0 V, V
GS
=
±5
V
V
DS
=
−1.5
V, I
D
=
−8
A
5. Pulse Test: pulse width = 300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS3A08P
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
0.20 C
D
D1
8 7 6 5
A
B
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
E1 E
4X
q
1 2 3 4
c
TOP VIEW
0.10 C
A
0.10 C
SIDE VIEW
b
C A B
8X
6X
A1
C
SEATING
PLANE
e
DETAIL A
DETAIL A
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.65
0.80
0.95
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0
_
−−−
12
_
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0
_
−−−
MIN
0.028
0.000
0.009
0.006
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12
_
0.10
0.05
C
4X
SOLDERING FOOTPRINT*
e/2
1
4
L
0.42
K
PACKAGE
OUTLINE
8X
0.65
PITCH
0.66
4X
E2
E3
8
5
M
D2
BOTTOM VIEW
L1
0.75
0.57
3.60
2.30
G
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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