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NVD6828NL

Description
8 A, 90 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size109KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

NVD6828NL Overview

8 A, 90 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET

NVD6828NL Parametric

Parameter NameAttribute value
Number of terminals2
Minimum breakdown voltage90 V
Processing package descriptionHALOGEN FREE AND ROHS COMPLIANT, CASE 369C-01, DPAK-3
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Shell connectionDRAIN
Number of components1
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current8 A
Maximum drain on-resistance0.0310 ohm
Maximum leakage current pulse206 A
NVD6828NL
Power MOSFET
Features
90 V, 20 mW, 41 A, Single N−Channel
Low R
DS(on)
to Minimize Conduction Losses
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent R
qJC
(Notes 1 & 3)
Power Dissipation R
qJC
(Note 1)
Continuous Drain
Current R
qJA
(Notes 1,
2 & 3)
Power Dissipation R
qJA
(Notes 1 & 2)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
90
"20
41
29
83
42
8.7
6.1
3.8
1.9
206
−55
to
175
40
90
A
°C
A
mJ
W
1 2
3
A
W
S
4
Unit
V
V
A
G
N−Channel
D
http://onsemi.com
V
(BR)DSS
90 V
R
DS(on)
20 mW @ 10 V
25 mW @ 4.5 V
I
D
41 A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
GS
= 10 V, I
L(pk)
= 24.5 A,
L = 0.3 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
DPAK
CASE 369C
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
YWW
68
28LG
2
Drain 3
1
Gate Source
Y
WW
6828L
G
= Year
= Work Week
= Device Code
= Pb−Free Package
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case
Steady State (Drain)
Junction−to−Ambient
Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
1.8
40
Unit
°C/W
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
ORDERING INFORMATION
Device
NVD6828NLT4G
Package
DPAK
(Pb−Free)
Shipping
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
August, 2012
Rev. 0
1
Publication Order Number:
NVD6828NL/D
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