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NGD8205AN

Description
IGBT
Categorysemiconductor    Discrete semiconductor   
File Size111KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

NGD8205AN Overview

IGBT

NGD8205AN Parametric

Parameter NameAttribute value
each_compliYes
EU RoHS regulationsYes
stateActive
jesd_609_codee3
moisture_sensitivity_levelNOT SPECIFIED
eak_reflow_temperature__cel_NOT SPECIFIED
terminal coatingMATTE TIN
ime_peak_reflow_temperature_max__s_NOT SPECIFIED
NGD8205N, NGD8205AN
Ignition IGBT
20 Amp, 350 Volt, N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
http://onsemi.com
Ideal for Coil−on−Plug and Driver−on−Coil Applications
DPAK Package Offers Smaller Footprint for Increased Board Space
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (R
G
) and Gate−Emitter Resistor (R
GE
)
These are Pb−Free Devices
20 A, 350 V
V
CE(on)
= 1.3 V @
I
C
= 10 A, V
GE
.
4.5 V
C
G
R
G
R
GE
E
4
1 2
Applications
Ignition Systems
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ T
C
= 25°C
Pulsed
Continuous Gate Current
Transient Gate Current (t≤2 ms, f≤100 Hz)
ESD (Charged−Device Model)
ESD (Human Body Model)
R = 1500
W,
C = 100 pF
ESD (Machine Model) R = 0
W,
C = 200 pF
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating & Storage Temperature Range
Symbol
V
CES
V
CER
V
GE
I
C
I
G
I
G
ESD
ESD
ESD
P
D
T
J
, T
stg
Value
390
390
"15
20
50
1.0
20
2.0
8.0
400
125
0.83
−55
to +175
Unit
V
V
V
A
DC
A
AC
mA
mA
kV
kV
V
W
W/°C
°C
NGD8205ANT4G
G
C
E
3
DPAK
CASE 369C
STYLE 7
MARKING DIAGRAM
1
YWW
NGD
8205xG
C
Y
WW
NGD8205x
x
G
= Year
= Work Week
= Device Code
= N or A
= Pb−Free Package
ORDERING INFORMATION
Device
NGD8205NT4G
Package
Shipping
DPAK
2500 / Tape & Reel
(Pb−Free)
DPAK
2500 / Tape & Reel
(Pb−Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NGD8205N/D
©
Semiconductor Components Industries, LLC, 2012
January, 2012
Rev. 9
1

NGD8205AN Related Products

NGD8205AN NGD8205ANT4G NGD8205N_12
Description IGBT IGBT IGBT
each_compli Yes Yes Yes
EU RoHS regulations Yes Yes Yes
state Active Active Active
jesd_609_code e3 e3 e3
moisture_sensitivity_level NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
eak_reflow_temperature__cel_ NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
terminal coating MATTE TIN MATTE TIN MATTE TIN
ime_peak_reflow_temperature_max__s_ NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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