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NSBC143EPDP6

Description
Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
File Size154KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NSBC143EPDP6 Overview

Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k

MUN5332DW1,
NSBC143EPDXV6,
NSBC143EPDP6
Complementary Bias
Resistor Transistors
R1 = 4.7 kW, R2 = 4.7 kW
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
(3)
R
1
Q
1
Q
2
R
2
(4)
(5)
R
1
(6)
http://onsemi.com
PIN CONNECTIONS
(2)
R
2
(1)
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25C both polarities Q
1
(PNP) & Q
2
(NPN), unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
30
10
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
MARKING DIAGRAMS
6
SOT−363
CASE 419B
1
32 M
G
G
SOT−563
CASE 463A
1
32 M
G
G
SOT−963
CASE 527AD
1
M
G
G
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
32/V
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
MUN5332DW1T1G,
NSVMUN5332DW1T1G
NSBC143EPDXV6T1G
NSBC143EPDP6T5G
Package
SOT−363
SOT−563
SOT−963
Shipping
3,000/Tape & Reel
4,000/Tape & Reel
8,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2012
September, 2012
Rev. 0
1
Publication Order Number:
DTC143EP/D

NSBC143EPDP6 Related Products

NSBC143EPDP6 MUN5332DW1 NSBC143EPDXV6
Description Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
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