2SK3921-01L,S,SJ
Super FAP-G Series
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
See to P4
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Non-repetitive
Maximum avalanche energy
Repetitive
Maximum avalanche energy
Maximum drain-source dV/dt
Peak diode recovery dV/dt
Maximum power dissipation
Operating and storage
temperature range
Symbol
V
DS
V
DSX
I
D
I
D(puls]
V
GS
I
AR
E
AS
dV
DS
/dt
dV/dt
P
D
T
ch
T
stg
Ratings
120
90
67
±268
±30
67
719.1
27.0
20
5
2.02
270
+150
-55 to +150
Unit
V
V
A
A
V
A
mJ
mJ
kV/μs
kV/μs
W
W
°C
°C
Remarks
VGS=-30V
Note *1
Note *2
Note *3
VDS < 120V
=
Note *4
Ta=25°C
Tc=25°C
Gate(G)
Source(S)
Equivalent circuit schematic
Drain(D)
Note *1 Tch< 150°C
=
Note *2 Starting Tch=25°C, I
AS
=27A, L=1.32mH, V
CC
=48V, R
G
=50Ω
E
AS
limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
Note *4 I
F
< -I
D
, -di/dt=50A/μs, Vcc < BV
DSS
, Tch < 150°C
=
=
=
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250
μ
A
V
GS
=0V
I
D
= 250
μ
A
V
DS
=V
GS
V
DS
=120V V
GS
=0V
V
DS
=96V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=33.5A V
GS
=10V
I
D
=33.5A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=48V I
D
=33.5A
V
GS
=10V
R
GS
=10
Ω
V
CC
=60V
I
D
=67A
V
GS
=10V
I
F
=67A V
GS
=0V T
ch
=25°C
I
F
=67A V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
T
ch
=25°C
T
ch
=125°C
Min.
120
3.0
Typ.
Max.
5.0
25
250
100
30.0
Units
V
V
μA
nA
mΩ
S
pF
14
24.6
28
1880
2820
360
540
30
45
20
30
35
53
50
75
23
35
52
78
16
24
18
27
1.10
1.50
150
0.9
ns
nC
V
ns
μC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
0.463
62.0
Units
°C/W
°C/W
http://www.fujielectric.co.jp/fdt/scd/
1
2SK3921-01L,S,SJ
Characteristics
Allowable Power Dissipation
PD=f(Tc)
FUJI POWER MOSFET
280
140
Typical Output Characteristics
ID=f(VDS):80
μ
s pulse test,Tch=25
°
C
20V
240
120
10V
200
100
8.0V
PD [W]
ID [A]
160
80
7.5V
60
7.0V
120
80
40
6.5V
6.0V
VGS=5.5V
40
20
0
0
25
50
75
100
125
150
0
0
1
2
3
4
5
6
7
Tc [
°
C]
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80
μ
s pulse test,VDS=25V,Tch=25
°
C
100
Typical Transconductance
gfs=f(ID):80
μ
s pulse test,VDS=25V,Tch=25
°
C
100
10
ID[A]
10
gfs [S]
1
1
0.1
0
1
2
3
4
5
6
7
8
9
10
0.1
0.1
1
10
100
VGS[V]
ID [A]
0.20
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
μ
s pulse test,Tch=25
°
C
7.0V
7.5V
0.08
0.07
0.06
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=33.5A,VGS=10V
VGS=5.5V 6.0V 6.5V
0.16
RDS(on) [
Ω
]
RDS(on) [
Ω
]
0.12
0.05
0.04
max.
0.03
typ.
0.02
0.08
0.04
10V
20V
0.01
0.00
0.00
0
20
40
60
80
100
120
-50
-25
0
25
50
75
100
125
150
ID [A]
Tch [
°
C]
2
2SK3921-01L,S,SJ
FUJI POWER MOSFET
7.0
6.5
6.0
5.5
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
μ
A
14
Typical Gate Charge Characteristics
VGS=f(Qg):ID=67A,Tch=25
°
C
12
VGS(th) [V]
5.0
4.5
max.
10
Vcc=60V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
min.
VGS [V]
4.0
8
6
4
2
0
-50
-25
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
90
Tch [
°
C]
Qg [nC]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
100
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
μ
s pulse test,Tch=25
°
C
Ciss
10
3
10
C [pF]
10
2
IF [A]
1
0.1
0.00
Coss
Crss
10
1
10
0
10
1
10
2
0.25
0.50
0.75
1.00
1.25
1.50
VDS [V]
VSD [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10
Ω
tf
10
3
800
700
600
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=67A
I
AS
=27A
td(off)
2
500 I
AS
=41A
10
EAV [mJ]
t [ns]
400
300
200
100
I
AS
=67A
td(on)
10
1
tr
10
0
0
-1
10
10
0
10
1
10
2
0
25
50
75
100
125
150
ID [A]
starting Tch [
°
C]
3
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