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ATP103_12

Description
General-Purpose Switching Device Applications
File Size443KB,7 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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ATP103_12 Overview

General-Purpose Switching Device Applications

Ordering number : ENA1623A
ATP103
SANYO Semiconductors
DATA SHEET
ATP103
Features
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance
Slim package
Halogen free compliance
Large current
4.5V drive
Protection diode in
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10μs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
--30
±20
--55
--165
50
150
--55 to +150
57
--28
Unit
V
V
A
A
W
°C
°C
mJ
A
Note :
*1
VDD=-
-10V,
L=100
μ
H, IAV=--28A
*2
L
100
μ
H, Single pulse
Package Dimensions
unit : mm (typ)
7057-001
ATP103-TL-H
6.5
0.5
1.5
0.4
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
ATP103
LOT No.
4
7.3
9.5
4.6
6.05
TL
Electrical Connection
4,2
0.55
0.7
0.5
1
0.8
2.3
2.3
3
0.6
1.7
2
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
1
0.1
3
http://semicon.sanyo.com/en/network
61312 TKIM/D0209PA TKIM TC-00002144 No.A1623-1/7

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ATP103_12 ATP103-TL-H ENA1623A
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