BS108
Small Signal MOSFET
250 mAmps, 200 Volts,
Logic Level
N−Channel TO−92
This MOSFET is designed for high voltage, high speed switching
applications such as line drivers, relay drivers, CMOS logic,
microprocessor or TTL to high voltage interface and high voltage
display drivers.
Features
http://onsemi.com
250 mAMPS
200 VOLTS
R
DS(on)
= 8
W
N−Channel
D
•
Low Drive Requirement, V
GS
= 3.0 V max
•
Inherent Current Sharing Capability Permits Easy Paralleling of
many Devices
•
AEC Qualified
•
PPAP Capable
•
This is a Pb−Free Device*
MAXIMUM RATINGS
Rating
Drain
−Source
Voltage
Gate−Source Voltage
Drain Current
Continuous (Note 1)
Pulsed (Note 2)
Total Power Dissipation
@ T
A
= 25°C
Derate above T
A
= 25°C
Operating and Storage Temperature Range
Symbol
V
DSS
V
GS
I
D
Value
200
±20
250
500
350
6.4
−55
to +150
Unit
Vdc
Vdc
mAdc
G
S
MARKING
DIAGRAM
A
BS108
YWW
G
G
I
DM
P
D
mW
mW/°C
°C
1
2
3
TO−92
CASE 29−11
STYLE 30
T
J
, T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
BS108 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BS108ZL1G
Package
TO−92
(Pb−Free)
Shipping
2000/Ammo Pack
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2011
April, 2011
−
Rev. 4
1
Publication Order Number:
BS108/D
BS108
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V
GS
= 0, I
D
= 10
mA)
Zero Gate Voltage Drain Current
(V
DSS
= 130 Vdc, V
GS
= 0)
Gate−Body Leakage Current
(V
GS
= 15 Vdc, V
DS
= 0)
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
(I
D
= 1.0 mA, V
DS
= V
GS
)
Static Drain−to−Source On−Resistance
(V
GS
= 2.0 Vdc, I
D
= 50 mA)
(V
GS
= 2.8 Vdc, I
D
= 100 mA)
Drain Cutoff Current
(V
GS
= 0.2 V, V
DS
= 70 V)
Forward Transconductance
(I
D
= 120 mA, V
DS
= 20 V)
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 V, V
GS
= 0, f = 1.0 MHz)
Output Capacitance
(V
DS
= 25 V, V
GS
= 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(V
DS
= 25 V, V
GS
= 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn−On Time (See Figure 1)
Turn−Off Time (See Figure 1)
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle = 2.0%.
t
d(on)
t
d(off)
−
−
−
−
15
15
ns
ns
C
iss
C
oss
C
rss
−
−
−
−
−
−
150
30
10
pF
pF
pF
V
GS(th)
r
DS(on)
0.5
−
−
−
−
−
−
−
−
0.33
1.5
10
8.0
25
−
Vdc
W
V
(BR)DS
I
DSS
I
GSSF
200
−
−
−
−
−
−
−
30
10
Vdc
nAdc
nAdc
Symbol
Min
Typ
Max
Unit
I
DSX
g
FS
mA
Mhos
RESISTIVE SWITCHING
+25 V
23
PULSE GENERATOR
V
in
40 pF
50
50
1.0 M
20 dB
50
W
ATTENUATOR
TO SAMPLING SCOPE
50
W
INPUT
V
out
t
on
90%
t
off
90%
10%
90%
10 V
INPUT
V
in
50%
10%
PULSE
WIDTH
50%
OUTPUT
V
INVERTED
out
Figure 1. Switching Test Circuit
Figure 2. Switching Waveforms
http://onsemi.com
2
BS108
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
R
P
L
SEATING
PLANE
B
STRAIGHT LEAD
BULK PACK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
---
0.250
---
0.080
0.105
---
0.100
0.115
---
0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
---
6.35
---
2.04
2.66
---
2.54
2.93
---
3.43
---
K
X X
H
V
1
D
G
J
C
N
N
SECTION X−X
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
R
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
---
2.04
2.66
1.50
4.00
2.93
---
3.43
---
K
G
X X
V
1
D
J
C
N
SECTION X−X
DIM
A
B
C
D
G
J
K
N
P
R
V
STYLE 30:
PIN 1. DRAIN
2. GATE
3. SOURCE
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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3
BS108/D
DSP and ARM Processors
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