BYW100-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
200V
1.5A
FEATURES
VERY LOW CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD AND REVERSE RECOVERY
TIMES
THE SPECIFICATIONS
AND CURVES
ENABLE THE DETERMINATION OF trr AND
I
RM
AT 100°C UNDER USERS CONDITIONS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
FRM
I
F(AV)
.
Parameter
Repetitive peak reverse voltage
Repetitive peak forward current *
Average forward current *
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
Maximum lead temperature for soldering during 10s at 4mm from
case
tp = 5
µs
F = 1KHz
Ta = 95°C
δ
= 0.5
tp=10 ms sinusoidal
Value
200
80
1.5
50
-65 +150
+ 150
230
Unit
V
A
A
A
°C
°C
°C
I
FSM
T
stg
Tj
T
L
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
Symbol
I
R
*
Parameter
Reverse leakage
current
Forward voltage drop
Tests conditions
V
R
= V
RRM
Tj = 25°C
Tj = 100°C
I
F
= 4.5 A
I
F
= 1.5 A
RECOVERY CHARACTERISTICS
Symbol
trr
tfr
V
FP
Qrr
I
F
= 1 A
Tests conditions
dI
F
/dt = - 50 A/µs
V
R
= 30 V
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
30
5
10
Min.
Typ.
Max.
35
Unit
ns
ns
V
nC
Tj = 25°C
Tj = 100°C
0.78
Min.
Typ.
Max.
10
0.5
1.2
0.85
Unit
µA
mA
V
V
F
**
I
F
= 1.5 A
dI
F
/dt = -50 A/µs
Measured at 1.1 x V
F
max.
I
F
= 1.5 A
I
F
= 1.5 A
dI
F
/dt = -50 A/µs
dI
F
/dt = -20 A/µs V
R
≤
30 V
E-mail: sales@taychipst.com
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Web Site: www.taychipst.com
BYW100-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
200V
1.5A
RATINGS AND CHARACTERISTIC CURVES
Fig. 1:
Average forward power dissipation versus
average forward current.
PF(av)(W)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
0.2
0.4
0.6
IF(av) (A)
0.8
1.0
1.2
δ
=tp/T
T
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ=1
BYW100-200
Fig. 2:
Average forward current versus ambient
temperature (δ=0.5).
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IF(av)(A)
Rth(j-a)=Rth(j-l)
Rth(j-a)=100°C/W
tp
Tamb(°C)
0
25
50
75
100
125
150
1.4
1.6
1.8
Fig. 3:
Thermal resistance versus lead length.
Rth(°C/W)
110
100
90
80
70
60
50
40
30
20
10
0
Rth(j-a)
Fig. 4:
Variation of thermal impedance junction to
ambient versus pulse duration (recommended pad
Zth(j-a)/Rth(j-a)
1.00
δ
= 0.5
δ
= 0.2
Rth(j-l)
0.10
δ
= 0.1
Single pulse
Lleads(mm)
5
10
15
20
25
tp(s)
1E-1
1E+0
1E+1
1E+2
5E+2
0.01
1E-2
Fig. 5:
Forward voltage drop versus forward
current (maximum values).
50.00
10.00
Tj=25°C
Fig. 6:
Junction capacitance versus reverse
voltage applied (typical values).
20
C(pF)
F=1MHz
Tj=25°C
IFM(A)
Tj=100°C
(Typical values)
10
5
Tj=100°C
1.00
2
VFM(V)
0.10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
VR(V)
1
1
10
100
200
Fig. 7:
Reverse recovery time versus dI
F
/dt .
150
trr(ns)
Tj=100°C
IF=1.5A
VR=30V
90% confidence
Fig. 8:
Peak reverse recovery current versus
dI
F
/dt.
2.5
2.0
1.5
IRM(A)
IF=1.5A
VR=30V
90% confidence
100
Tj=25°C
Tj=100°C
1.0
50
0.5
0
dIF/dt(A/µs)
1
10
100
Tj=25°C
0.0
dIF/dt(A/µs)
1
10
100
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Web Site: www.taychipst.com
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