IDT71V433S12PFI datasheet, PDF

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IDT71V433S12PFI: DescriptionCache SRAM, 32KX32, 12ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100; Categorystorage storage; File Size260KB，19 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT71V433S12PFI Overview

Cache SRAM, 32KX32, 12ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100

IDT71V433S12PFI Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Parts packaging code	QFP
package instruction	14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
Contacts	100
Reach Compliance Code	not_compliant
ECCN code	3A991.B.2.B
Maximum access time	12 ns
I/O type	COMMON
JESD-30 code	R-PQFP-G100
JESD-609 code	e0
length	20 mm
memory density	1048576 bit
Memory IC Type	CACHE SRAM
memory width	32
Humidity sensitivity level	3
Number of functions	1
Number of terminals	100
word count	32768 words
character code	32000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	32KX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LQFP
Encapsulate equivalent code	QFP100,.63X.87
Package shape	RECTANGULAR
Package form	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	1.6 mm
Maximum standby current	0.015 A
Minimum standby current	3.14 V
Maximum slew rate	0.21 mA
Maximum supply voltage (Vsup)	3.63 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn85Pb15)
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	20
width	14 mm

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32K x 32

3.3V Synchronous SRAM

Flow-Through Outputs

Features

32K x 32 memory configuration

Supports high performance system speed:

Commercial and Industrial:

— 11 11ns Clock-to-Data Access (50MHz)

— 12 12ns Clock-to-Data Access (50MHz)

LBO

input selects interleaved or linear burst mode

Self-timed write cycle with global write control (GW), byte

write enable (BWE), and byte writes (BWx)

Power down controlled by ZZ input

Single 3.3V power supply (+10/-5%)

Packaged in a JEDEC Standard 100-pin rectangular plastic

thin quad flatpack (TQFP).

IDT71V433

Description

The IDT71V433 is a 3.3V high-speed 1,048,576-bit SRAM orga-

nized as 32K x 32 with full support of various processor interfaces

including the Pentium™ and PowerPC™. The flow-through burst archi-

tecture provides cost-effective 2-1-1-1 performance for processors up to

50 MHz.

The IDT71V433 SRAM contains write, data-input, address and

control registers. There are no registers in the data output path (flow-

through architecture). Internal logic allows the SRAM to generate a

self-timed write based upon a decision which can be left until the

extreme end of the write cycle.

The burst mode feature offers the highest level of performance to

the system designer, as the IDT71V433 can provide four cycles of data

for a single address presented to the SRAM. An internal burst address

counter accepts the first cycle address from the processor, initiating the

access sequence. The first cycle of output data will flow-through from

the array after a clock-to-data access time delay from the rising clock

edge of the same cycle. If burst mode operation is selected (ADV=LOW),

the subsequent three cycles of output data will be available to the

user on the next three rising clock edges. The order of these three

addresses will be defined by the internal burst counter and the

LBO

input pin.

The IDT71V433 SRAM utilizes IDT's high-performance 3.3V

CMOS process, and is packaged in a JEDEC Standard 14mm x 20mm

100-pin thin plastic quad flatpack (TQFP).

Pin Description

–A

BWE

–BW

CLK

ADV

ADSC

ADSP

LBO

I/O

–I/O

, V

DDQ

, V

SSQ

Address Inputs

Chip Enable

Chips Selects

Output Enable

Global Write Enable

Byte Write Enable

Individual Byte Write Selects

Clock Input

Burst Address Advance

Address Status (Cache Controller)

Address Status (Processor)

Linear / Interleaved Burst Order

Sleep Mode

Data Input/Output

Co re and I/O Power Supply (3.3V)

Array Ground, I/O Ground

Input

I/O

Power

Synchronous

Asynchronous

Synchronous

N/A

Synchronous

Asynchronous

Synchronous

N/A

3729 tbl 01

Pentium is a trademark of Intel Corp.

PowerPC is a trademark of International Business Machines, Inc.

AUGUST 2001

DSC-3729/04

IDT71V433S12PFI Related Products

	IDT71V433S12PFI	IDT71V433S11PF	IDT71V433S11PFI	IDT71V433S12PF
Description	Cache SRAM, 32KX32, 12ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	Cache SRAM, 32KX32, 11ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	Cache SRAM, 32KX32, 11ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	Cache SRAM, 32KX32, 12ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
Parts packaging code	QFP	QFP	QFP	QFP
package instruction	14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
Contacts	100	100	100	100
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B
Maximum access time	12 ns	11 ns	11 ns	12 ns
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100
JESD-609 code	e0	e0	e0	e0
length	20 mm	20 mm	20 mm	20 mm
memory density	1048576 bit	1048576 bit	1048576 bit	1048576 bit
Memory IC Type	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
memory width	32	32	32	32
Humidity sensitivity level	3	3	3	3
Number of functions	1	1	1	1
Number of terminals	100	100	100	100
word count	32768 words	32768 words	32768 words	32768 words
character code	32000	32000	32000	32000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	70 °C	85 °C	70 °C
organize	32KX32	32KX32	32KX32	32KX32
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LQFP	LQFP	LQFP	LQFP
Encapsulate equivalent code	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	240	240	240	240
power supply	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.6 mm	1.6 mm	1.6 mm	1.6 mm
Maximum standby current	0.015 A	0.015 A	0.015 A	0.015 A
Minimum standby current	3.14 V	3.14 V	3.14 V	3.14 V
Maximum slew rate	0.21 mA	0.22 mA	0.22 mA	0.21 mA
Maximum supply voltage (Vsup)	3.63 V	3.63 V	3.63 V	3.63 V
Minimum supply voltage (Vsup)	3.135 V	3.135 V	3.135 V	3.135 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.65 mm	0.65 mm	0.65 mm	0.65 mm
Terminal location	QUAD	QUAD	QUAD	QUAD
Maximum time at peak reflow temperature	20	20	20	20
width	14 mm	14 mm	14 mm	14 mm

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