BZD27C3V6P~BZD27C75P
VOLTAGE REGULATOR DIODES
3.6V-75V 800mW
FEATURES
◇
Sillicon planar zener diodes.
◇
Low profile surface-mount package.
◇
Zener and surge current specification
◇
Low leakage current
◇
Excellent stability
◇
High temperature soldering guaranteed:
℃
/10 seconds, at terminals
SOD-123FL
MECHANICAL DATA
◇
Case: JEDEC SOD-123FL molded plastic
◇
Polarity: Color band denotes positive end
( cathode ) except for bidirectional
◇
Marking code: see TABLE 1
◇
Weight: 0.006 ounces, 0.02 grams
◇
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Parameter
Power dissipation
Test conditon
T
L
=80
O
C
T
A
=25
O
C
100
µ
s square pulse(note 2)
Non-repetitive peak pulse power dissipation
10/1000
µ
s waveform (BZD27-C7V5P to BZD27-C75P)
Symbol
P
TOT
P
TOT
P
ZSM
P
RSM
Value
2.3
0.8 (note 1)
300
W
150
Units
W
THERMAL CHARACTERISTICS
P a ra me te r
The r m a l r e s i s t a nc e j unc t i o n t o a m b i e nt a i r
The r m a l r e s i s t a nc e j unc t i o n t o l e a d
M a xi m um j unc t i o n t e m p e r a t ur e
S t o r a g e t e m p e r a t ur e r a ng e
Te s t c o n d i t i o n
S ym b o l
R
θ
J A
R
θ
J L
Τ
J
T
s
Va l ue
180
30
150
-5 5 to + 1 5 0
U ni t
K /W
K /W
O
C
C
O
ELCTRICAL CHARACTERISTICS
PA RA M E TE R
F o r w a r d vo l t a g e
Te s t c o n d i t i o n
I
F
= 0 . 2 A
S ym b o l
V
F
Mi n
Ty p
Max
1.2
U ni t s
V
NOTES:
1. Mounted on epoxy-glass PCB with 3X3 mm Cu pads (>40µm thick)
2. T
J
=25
O
C prior to surge
E-mail: sales@taychipst.com
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Web Site: www.taychipst.com
BZD27C3V6P~BZD27C75P
VOLTAGE REGULATOR DIODES
3.6V-75V 800mW
RATINGS AND CHARACTERISTIC CURVES
Figure 1. Forward Current vs. Forward Voltage
10.00
BZY97 BZD27C3V6P THRU BZD27C75P
Figure 2. Maximum Pulse Power Dissipation vs. Zener Voltage
160
140
P
RSM
–Max. Pulse Power Dissipation ( W )
I
F
– Forward Current ( A )
Typ. V
F
Max. V
F
120
100
80
60
40
20
0
0
25
50
75 100 125 150 175 200
V
Znom
– Zener Voltage ( V )
1.00
0.10
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
V
F
– Forward Voltage ( V )
Figure 3. Typ. Diode Capacitance vs. Reverse Voltage
10000
C5V1P
1000
C6V8P
C12P
C18P
Figure 4. Non-Repetitive Peak Reverse Current Pulse Definition
C
D
– Typ. Junction Capacitance ( pF )
I
RSM
(%)
100
90
t
1
= 10
µs
t
2
= 1000
µ
s
100
C27P
C200P
C51P
50
10
3.0
10
0.0
0.5
1.0
1.5
2.0
2.5
V
R
– Reverse Voltage (V)
t
1
t
2
t
Figure 5. Power Dissipation vs. Ambient Temperature
3.0
P –Power Dissipation ( W )
tot
2.5
2.0
1.5
1.0
0.5
0.0
0
tie point temperature
ambient temperature
25
50
75
100
125
150
T
amb
– Ambient Temperature ( C )
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