TPC816 SERIES
Taiwan Semiconductor
Small Signal Product
4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
FEATURES
- Current transfer ratio
(CTR: MIN.80% at I
F
=5mA, V
CE
=5V)
- High isolation voltage between input
and output (Viso=5000V rms)
- High collector-emitter voltage (V
CEO
:70V)
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
- Packing code with suffix "G" means
green compound (halogen-free)
DIP-4
DIP-4M
SOP-4
APPLICATION
- Programmable controllers
- System appliances,measuring instruments
- Signal transmission between circuits of different potentials
And impedances
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Forward current
Input
Peak forward current (Note 1)
Reverse voltage
Power dissipation
Collector-emitter voltage
Output
Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
Isolation voltage (Note 2)
Operating temperature
Storage temperature
Soldering temperature (Note 3)
Note 1: Pulse width<=100ms, Duty ratio: 0.001
Note 2: 40 to 60% RH, AC for 1 minute
Note 3: For 10s
SYMBOL
I
F
I
FM
V
R
P
V
CEO
V
ECO
I
C
P
C
P
tot
V
iso
T
opr
T
stg
T
sol
RATING
50
1
6
70
70
6
50
150
200
5000
-30 to +100
-55 to +125
260
UNIT
mA
A
V
mW
V
V
mA
mW
mW
Vrms
°C
°C
°C
Document Number: DS_S0000023
Version: A15
TPC816 SERIES
Taiwan Semiconductor
Small Signal Product
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Forward voltage
Input
Peak forward voltage
Reverse current
Terminal capacitance
Output
Collector dark current
Current transfer ration
(Note 4)
Collector-emitter
saturation voltage
Transfer
Characteristics
Isolation resistance
Floating capacitance
Cut-off frequency
Response time
Rise time
Fall time
SYMBOL
V
F
V
FM
I
R
C
t
I
CEO
CTR
V
CE(sat)
R
ISO
C
f
f
c
t
r
t
f
CONDITIONS
I
F
=20mA
I
FM
=0.5A
V
R
=4V
V=0, f=1kHz
V
CE
=20V, I
F
=0
I
F
=5mA, V
CE
=5V
I
F
=20mA, I
C
=1mA
DC500V, 40 to 60%RH
V=0, f=1MHz
V
CE
=5V, I
C
=2mA,
R
L
=100Ω, -3dB
V
CE
=2V, I
C
=2mA,
R
L
=100Ω
MIN.
-
-
-
-
-
80
-
5x10
10
-
-
-
-
TYP.
1.2
-
-
30
-
-
0.1
10
11
0.6
80
4
3
MAX.
1.4
3.0
10
250
10
-7
600
0.2
-
1.0
-
18
18
UNIT
V
V
μA
pF
A
%
V
Ω
pF
KHz
μs
μs
Note 4: Classification table of current transfer ratio is shown below
RANK TABLE OF CURRENT TRANSFER RATIO, CTR
RANK MARK
A
B
C
D
MIN (%)
80
130
200
300
MAX (%)
160
260
400
600
ORDERING INFORMATION
PART NO.
(Note 1, 2)
TPC816x
TPC816Mx
TPC816S1x
PACKING
CODE
C9
C9
RA
G
PACKING CODE
SUFFIX
PACKAGE
DIP-4
DIP-4M (Leads with 0.4" spacing)
SOP-4
PACKING
100 / TUBE
100 / TUBE
2K / 13" Reel
Note 1: "x" defines CTR rank from "A" to "D"
Note 2: Whole series with green compound
EXAMPLE
PREFERRED P/N
TPC816A C9G
PART NO.
TPC816A
PACKING
CODE
C9
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
MARKING
Note:
816: Product type
B: CTR rank mark
YWW: Date code
Document Number: DS_S0000023
Version: A15
TPC816 SERIES
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
60
I
F
,Instantaneous Forward Current (mA)
50
40
30
20
10
0
-30
-15
0
Fig. 1 Forward Current vs.
Ambient Temperature
200
Collector power dissipation, Pc (mW)
Fig. 2 Collector Power Dissipation vs.
Ambient Temperature
150
100
50
0
-30
-15
0
15
30
45
60
75
90
105
120
15
30
45
60
75
90
105
120
Ambient temperature, Ta (°C)
Ambient temperature, Ta (°C)
Fig. 3 Peak Forward Current vs.
Duty Ratio
10000
Pulse width <=100μs
Forward current I
F
(mA)
1000
75°C
Peak forward current I
FM
(mA)
1000
100
Fig. 4 Forward Current vs.
Forward Voltage
50°C
10
25°C
100
0°C
1
-25°C
10
0.1
1
0.0001
0.01
0.001
0.01
Duty ratio
0.1
1
0
0.5
1
1.5
2
2.5
3
3.5
Forward voltage V
F
(V)
Document Number: DS_S0000023
Version: A15
TPC816 SERIES
Taiwan Semiconductor
Small Signal Product
200
180
Fig. 5 Current Transfer Ratio vs.
Forward Current
60
50
Collector current Ic(mA)
40
30
20
10
0
I
F
=30mA
25mA
20mA
Fig. 6 Collector Current vs.
Collector-emitter Voltage
160
Current transfer ratio (%)
140
120
100
80
60
40
20
0
1
10
Forward current I
F
(mA)
100
V
CE
=5V
15mA
10mA
5mA
0
1
2
3
4
5
6
7
8
9
Collector-emitter voltage V
CE
(V)
Fig. 7 Relative Current Transfer Ratio vs.
Ambient Temperature
150
I
F
=5mA
V
CE
=5V
Relative current transfer ratio (%)
100
Collector-emitter saturation voltage VCE(sat)
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
-30
Fig. 8 Collector-emitter Saturation Voltage vs
Ambient Temperature
I
F
=20mA
I
C
=1mA
50
0
-30
0
30
60
90
120
0
30
60
90
120
Ambient temperature Ta(°C)
Ambient temperature Ta(°C)
Document Number: DS_S0000023
Version: A15
TPC816 SERIES
Taiwan Semiconductor
Small Signal Product
1.E-04
1.E-05
Collector dark current I
CEO
(A)
Fig. 9 Collector Dark Current vs.
Ambient temperature
V
CE
=20V
1000
I
C
=2mA
V
CE
=2V
Response time (μs)
100
Fig. 10 Response Time vs.
Load Resistance
1.E-06
1.E-07
1.E-08
1.E-09
1.E-10
-30
0
30
60
90
tr
tf
10
td
1
ts
0.1
0.01
0.1
1
Load resistance R
L
(kΩ)
10
100
Ambient temperature Ta(°C)
Fig. 11Frequency Response
4
0
-2
-4
Voltage gain Av(dB)
-6
-8
-10
-12
-14
-16
-18
-20
-22
-24
0.1
1
10
Frequency f(kHz)
100
1000
RL=10kΩ
1kΩ
100Ω
Collector-emitter saturation voltage V
CE
(sat)
2
I
C
=2mA
V
CE
=5V
6
5
4
3
Fig. 12 Collector-emitter Saturation Voltage
vs
I
F
=20mA
I
C
=1mA
7mA
5mA
3mA
2
1
0
0
2
4
6
1mA
I
C
=0.5mA
8
10
12
14
16
18
20
Forward current I
F
(mA)
Test Circuit Response Time
Test Circuit for Frequency Response
Document Number: DS_S0000023
Version: A15
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