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C527MB290-0203

Description
Single Color LED, White,
CategoryLED optoelectronic/LED    photoelectric   
File Size253KB,7 Pages
ManufacturerCree
Websitehttp://www.cree.com/
Download Datasheet Parametric View All

C527MB290-0203 Overview

Single Color LED, White,

C527MB290-0203 Parametric

Parameter NameAttribute value
MakerCree
Reach Compliance Codeunknown
colorWHITE
Maximum forward current0.03 A
Installation featuresSURFACE MOUNT
Number of functions1
Maximum operating temperature100 °C
Minimum operating temperature-40 °C
Optoelectronic device typesSINGLE COLOR LED
method of packingBULK
shapeSQUARE
surface mountYES
MegaBright
®
Generation II LEDs
CxxxMB290-Sxx00
Cree’s MB™ Generation II series of MegaBright LEDs combine highly efficient InGaN materials with Cree’s
proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED chips have a
geometrically enhanced vertical chip structure to maximize light extraction efficiency and require only a single wire
bond connection. Sorted die kits provide die sheets conveniently sorted into wavelength and radiant flux bins. Cree’s
MB series chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000V
ESD. These LEDs are useful in a broad range of applications such as outdoor full-motion LED video signs, automotive
lighting and white LEDs, yet can also be used in high-volume applications such as LCD backlighting. Cree’s MB series
chips are compatible with most radial and SMT LED assembly processes.
FEATURES
MegaBright LED Performance
460 & 470nm
MB-8 – 8.0 mW min.
MB-10 - 10.0 mW min.
MB-12 - 12.0 mW min.
MB-14 - 14.0 mW min.
MB-16 - 16.0 mW min (460 nm)
APPLICATIONS
White LEDs
LCD Backlighting Units
Outdoor LED Video Displays
Automotive Dashboard Lighting
Traffic Signals
505 nm - 6.0 mW min.
527 nm - 5.0 mW min.
Single Wire Bond Structure
Class 2 ESD Rating
CxxxMB290-Sxx00 Chip Diagram
Top View
G•SiC LED Chip
300 x 300 μm
Mesa (junction)
250 x 250 μm
Gold Bond Pad
112 μm Diameter
Bottom View
Die Cross Section
InGaN
Anode (+)
C
PR3CK, Rev.
Datasheet: C
SiC Substrate
h = 250 μm
Backside
Metallization
Cathode (-)
Subject to change without notice.
www.cree.com


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