The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
Integrated Circuit Solution Inc.
DR023-0E 6/11/2004
1
IC42S81600/IC42S81600L
IC42S16800/IC42S16800L
4(2)M x 8(16) Bits x 4 Banks (128-MBIT)
SYNCHRONOUS DYNAMIC RAM
FEATURES
• Single 3.3V (± 0.3V) power supply
• High speed clock cycle time -6: 166MHz<3-3-3>,
-7H: 133MHz<2-2-2>, -7: 133MHz<3-3-3>, -8:
100MHz<2-2-2>
• Fully synchronous operation referenced to clock
rising edge
• Possible to assert random column access in
every cycle
• Quad internal banks contorlled by BA0 & BA1
(Bank Select)
• Byte control by LDQM and UDQM for
IC42S16800
• Programmable Wrap sequence (Sequential /
Interleave)
• Programmable burst length (1, 2, 4, 8 and full
page)
• Programmable
CAS
latency (2 and 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• X8, X16 organization
• LVTTL compatible inputs and outputs
• 4,096 refresh cycles / 64ms
• Burst termination by Burst stop and Precharge
command
• Package 400mil 54-pin TSOP-2
DESCRIPTION
The IC42S81600 and IC42S16800 are high-speed
134,217,728-bit synchronous dynamic random-
access memories, organized as 4,194,304 x 8 x 4 and
2,097,152 x 16 x 4 (word x bit x bank), respectively.
The synchronous DRAMs achieved high-speed data
transfer using the pipeline architecture. All input and
outputs are synchronized with the positive edge of the
clock.The synchronous DRAMs are compatible with
Low Voltage TTL (LVTTL).These products are pack-
aged in 54-pin TSOP-2.
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
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