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FDS6670S
August 2001
FDS6670S
30V N-Channel PowerTrench
®
SyncFET
™
General Description
The FDS6670S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDS6670S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Features
•
13.5 A, 30 V.
R
DS(ON)
= 9 mΩ @ V
GS
= 10 V
R
DS(ON)
= 12.5 mΩ @ V
GS
= 4.5 V
•
•
•
Includes SyncFET Schottky body diode
Low gate charge (24nC typical)
High performance trench technology for extremely low
R
DS(ON)
and fast switching
•
High power and current handling capability
Applications
•
DC/DC converter
•
Motor drives
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
30
±20
(Note 1a)
Units
V
V
A
W
13.5
50
2.5
1.2
1
–55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS6670S
Device
FDS6670S
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
©2001
Fairchild Semiconductor Corporation
FDS6670S Rev E (W)
FDS6670S
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= 1 mA
I
D
= 1 mA, Referenced to 25°C
V
DS
= 24 V,
V
GS
= 20 V,
V
GS
= –20 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
Min
30
Typ
Max Units
V
Off Characteristics
24
500
100
–100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= 1 mA
I
D
= 1 mA, Referenced to 25°C
V
GS
= 10 V,
I
D
= 13.5 A
V
GS
= 4.5 V,
I
D
= 11.2 A
V
GS
=10 V, I
D
=13.5A, T
J
=100°C
V
GS
= 10 V,
V
DS
= 10 V,
V
DS
= 5 V
I
D
= 13.5 A
1
2.2
–6.2
7
9.5
9
3
V
mV/°C
9
12.5
12.5
mΩ
I
D(on)
g
FS
50
45
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
2674
751
254
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d
(
off
)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DS
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
11
10
44
23
20
20
70
37
34
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 13.5 A,
24
7.3
6
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Notes:
1.
R
θJA
is the sum of the junction-to-case and case -to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 50°C/W when
mounted on a 1 in
2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V, I
S
= 3.5 A
V
GS
= 0 V, I
S
= 7 A
I
F
= 13.5A,
d
iF
/d
t
= 300 A/µs
(Note 2)
(Note 2)
3.5
0.4
0.5
26.8
47.2
0.7
A
V
nS
nC
(Note 3)
FDS6670S Rev E (W)
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3.
See “SyncFET Schottky body diode characteristics” below.
FDS6670S Rev E (W)
FDS6670S
Typical Characteristics
50
2.6
V
GS
= 10V
40
I
D
, DRAIN CURRENT (A)
6.0V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.5V
4.0V
3.5V
2.2
V
GS
= 3.5V
30
1.8
4.0V
1.4
20
4.5V
6.0V
10
3.0V
1
10V
0
0
0.5
1
1.5
2
V
D S
, DRAIN-SOURCE VOLTAGE (V)
0.6
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.025
R
DS(ON)
, ON-RESISTANCE (OHM)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.6
I
D
= 13.5A
V
GS
= 10V
1.4
I
D
= 6.8A
0.02
1.2
0.015
1
T
A
= 125 C
o
0.8
0.01
T
A
= 25 C
o
0.6
-50
-25
0
25
50
o
75
100
0.005
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
70
60
I
D
, DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
T
A
= -55 C
125 C
o
o
25 C
o
V
GS
= 0V
1
o
50
40
30
20
10
0
2
2.5
3
3.5
4
4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
A
= 125 C
o
25 C
0.1
-55 C
0.01
o
0.001
0
0.1
0.2
0.3
0.4
0.5
0.6
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6670S Rev E (W)
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