Low Profile SMD Super Fast Recovery Rectifiers
SMD Diodes Specialist
CSFMT101-HF Thru. CSFMT108-HF
Reverse Voltage: 50 to 600 Volts
Forward Current: 1.0 Amp
RoHS Device
Halogen Free
Features
-Excellent power dissipation offers better reverse
leakage current and thermal resistance.
-Low profile package is 40% thinner than standards
SOD-123.
-Tiny plastic SMD package.
-High current capability.
-Super fast reovery time for switching mode application.
-High surge current capability.
-Glass passivated chip junction.
-Lead-free parts meet RoHS requirment.
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
Mechanical data
-Epoxy: UL94-V0 rated flame retardant.
-Case: Molded plastic, SOD-123H/MINI SMA
-Terminals: Solderable per MIL-STD-750, Method 2026.
-Polarity: Indicated by cathode band.
-Mounting Position: any
-Weight: 0.011 grams approx.
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeter)
Maximum Ratings
(at T
A
=25°C unless otherwise noted)
Parameter
Max. repetitive peak reverse voltage
Max. Continuous rever voltage
Max. RMS voltage
Max. averaged forward current
Max. Forward voltage
@ I
F
=1.0A
Reverse recovery time (Note 1)
Max. Forward surge current
8.3ms singe half sine-wave superimposed
on rated load (JEDEC method)
Symbol
V
RRM
V
R
V
RMS
I
O
V
F
T
RR
CSFMT CSFMT CSFMT CSFMT CSFMT CSFMT CSFMT CSFMT
101-HF 102-HF 103-HF 104-HF 105-HF 106-HF 107-HF 108-HF
Unit
V
V
V
A
50
50
35
100
100
70
150
150
105
200
200
140
1.0
300
300
210
400
400
280
500
500
350
600
600
420
0.95
35
1.25
1.70
V
ns
I
FSM
25
5.0
A
V
R
=V
RRM
T
J
=25°C
Max. Reverse current
V
R
=V
RRM
T
J
=100°C
Typ. Thermal resistance
Junction to ambient air
I
R
100
R
θJA
C
J
T
J
T
STG
42
10
-55 to +150
-65 to +175
μA
°C/W
pF
°C
°C
Typ. Junction capacitance
f=1MHz and applied 4V DC reverse voltage
Operating junction temperature
Storage temperature
Note 1. Reverse recovery time test condition,I
F
=0.5A,I
R
=1.0A,I
RR
=0.25A
REV: A
QW-JS002
Page 2
Comchip Technology CO., LTD.
Low Profile SMD Super Fast Recovery Rectifiers
SMD Diodes Specialist
Rating and Characteristic Curves (CSFMT101-HF Thru. CSFMT108-HF)
Fig.2- Typical Forward Current
Derating Curve
1.4
10
Fig.1- Typical Forward Characteristics
Ι
F
,Instantaneous Forward Current, (A)
I
O
, Average Forward Current, (A)
1-H
F~
1
FM
T1
0
1.2
1.0
0.8
0.6
0.4
0.2
0
0
04
Single phase, half
wave, 60Hz, resistive
or inductive load
-H
F
1.0
5-
HF
~1
0
T1
0
CS
6-
HF
FM
CS
0.1
C
0
T1
M
SF
7-
H
10
F~
HF
8-
0.01
T
J
=25
O
C
Pulse width=300μs
1% duty cycle
25
50
75
100
125
150
175
0.001
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
T
A
, Ambient Temperature (°C)
V
F
, Forward Voltage (V)
Fig.3- Test Circuit Diagram and Reverse
Recovery Time Characteristics
25
50
W
NONINDUCTIVE
Fig.4- Maximum Non-repetitive
Forward Surge Current
I
FSM
, Peak Forward Surge Current, (A)
T
J
=25 C
8.3ms single half sine
wave, JEDEC method
O
10
W
NONINDUCTIVE
20
(+)
25Vdc
(approx.)
( )
1
W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
15
10
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
5
trr
+0.5A
|
|
|
|
|
|
|
|
0
1
10
100
Number of Cycles at 60Hz
0
-0.25A
Fig.5- Typical Junction Capacitance
70
C
J
, Junction Capacitance, (pF)
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
60
50
40
30
20
10
0
0.01
0.1
1
10
100
V
R
, Reverse Voltage, (V)
REV: A
QW-JS002
Page 2
Comchip Technology CO., LTD.
Microcontroller MCU
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