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MMBD1704D87Z

Description
Rectifier Diode, 2 Element, 0.05A, 30V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size43KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

MMBD1704D87Z Overview

Rectifier Diode, 2 Element, 0.05A, 30V V(RRM), Silicon

MMBD1704D87Z Parametric

Parameter NameAttribute value
MakerFairchild
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum output current0.05 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.35 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.0007 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
MMBD1701/A / 1703/A / 1704/A / 1705/A
MMBD1701/A / 1703/A / 1704/A / 1705/A
3
3
1
2
1
MMBD1701
MMBD1703
MMBD1704
MMBD1705
MARKING
85
MMBD1701A
87
MMBD1703A
88
MMBD1704A
89
MMBD1705A
85A
87A
88A
89A
Connection Diagrams
1701
3
3 1703
85
2
1
1704 3
2NC
1
2
3 1705
SOT-23
1
2
1
2
Small Signal Diodes
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Storage Temperature Range
Operating Junction Temperature
Value
30
50
250
-55 to +150
150
Units
V
mA
mA
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
T
A
= 25°C unless otherwise noted
Parameter
Value
350
357
Units
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
Parameter
Breakdown Voltage
Forward Voltage
Test Conditions
I
R
= 5.0
µA
I
F
= 10
µA
I
F
= 100
µA
I
F
= 1.0 m A
I
F
= 10 mA
I
F
= 20 mA
I
F
= 50 mA
V
R
= 20 V
V
R
= 0, f = 1.0 MHz
I
F
= I
R
= 10 mA, I
RR
= 1.0 m A,
R
L
= 100
I
F
= I
R
= 10 mA, I
RR
= 1.0 m A,
R
L
= 100
Min
30
420
520
640
760
810
0.89
Max
500
610
740
880
950
1.1
50
1.0
0.7
1.0
Units
V
mV
mV
mV
mV
mV
V
nA
pF
ns
ns
I
R
C
T
t
rr
Reverse Current
Total Capacitance
Reverse Recovery Time
MMBD1701-1705
MMBD1701A-1705A
2001
Fairchild Semiconductor Corporation
MMBD1700 series, Rev. B1

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