MMBD1701/A / 1703/A / 1704/A / 1705/A
MMBD1701/A / 1703/A / 1704/A / 1705/A
3
3
1
2
1
MMBD1701
MMBD1703
MMBD1704
MMBD1705
MARKING
85
MMBD1701A
87
MMBD1703A
88
MMBD1704A
89
MMBD1705A
85A
87A
88A
89A
Connection Diagrams
1701
3
3 1703
85
2
1
1704 3
2NC
1
2
3 1705
SOT-23
1
2
1
2
Small Signal Diodes
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Storage Temperature Range
Operating Junction Temperature
Value
30
50
250
-55 to +150
150
Units
V
mA
mA
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
T
A
= 25°C unless otherwise noted
Parameter
Value
350
357
Units
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
Parameter
Breakdown Voltage
Forward Voltage
Test Conditions
I
R
= 5.0
µA
I
F
= 10
µA
I
F
= 100
µA
I
F
= 1.0 m A
I
F
= 10 mA
I
F
= 20 mA
I
F
= 50 mA
V
R
= 20 V
V
R
= 0, f = 1.0 MHz
I
F
= I
R
= 10 mA, I
RR
= 1.0 m A,
R
L
= 100
Ω
I
F
= I
R
= 10 mA, I
RR
= 1.0 m A,
R
L
= 100
Ω
Min
30
420
520
640
760
810
0.89
Max
500
610
740
880
950
1.1
50
1.0
0.7
1.0
Units
V
mV
mV
mV
mV
mV
V
nA
pF
ns
ns
I
R
C
T
t
rr
Reverse Current
Total Capacitance
Reverse Recovery Time
MMBD1701-1705
MMBD1701A-1705A
2001
Fairchild Semiconductor Corporation
MMBD1700 series, Rev. B1
MMBD1701/A / 1703/A / 1704/A / 1705/A
Small Signal Diode
(continued)
Typical Characteristics
60
Ta= 25
°
C
10
Ta= 25
°
C
50
Reverse Current. I
R
[nA]
Reverse Voltage, V
R
[V]
5
40
0
1
2
3
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100 uA
Reverse Current,I
R
[uA]
5
10
20
30
50
100
1
2
Reverse Voltage, V
R
[V]
3
5
10
20
Figure 2. Reverse Current vs Reverse Voltage
IR - 1 to 22V
600
Ta= 25
°
C
850
Ta= 25
°
C
Forward Voltage, V
F
[mV]
550
500
Forward Voltage, V
F
[mV]
1
2
3
5
10
20
30
50
100
800
750
450
700
400
650
350
600
300
550
Forward Current, I
F
[uA]
0.1
0.2
0.3
Forward Current, I
F
[mA]
0.5
1
2
3
5
10
Figure 3. Forward Voltage vs Forward Current
VF - 1.0 to 100 uA
Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10 mA
1.6
1.0
Ta= 25
°
C
Ta= 25
°
C
To tal C apacitance [pF ]
Forward Voltage, V
F
[V]
0.9
1.4
0.8
1.2
0.7
1.0
0.6
0.8
0.5
10
20
30
50
100
200
0
2
4
6
8
10
12
14
Forward Current, I
F
[m A]
R e v e rse V o lta g e [V ]
Figure 5. Forward Voltage vs Forward Current
VF - 10 - 200 mA
Figure 6. Total Capacitance vs Reverse Current
MMBD1700 series, Rev. B1
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reasonably expected to result in significant injury to the
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
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Rev. H4