DCR3030V42
Phase Control Thyristor
FEATURES
Double Side Cooling
High Surge Capability
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dV/dt*
dI/dt
4200V
3030A
40600A
1500V/µs
400A/µs
APPLICATIONS
High Power Drives
High Voltage Power Supplies
Static Switches
*
Higher dV/dt selections available
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
V
DRM
and V
RRM
V
4200
4000
3500
3000
Conditions
DCR3030V42
DCR3030V40
DCR3030V35
DCR3030V30
T
vj
= -40°C to 125°C,
I
DRM
= I
RRM
= 200mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR3030V42
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
Outline type code: V
(See Package Details for further information)
Fig. 1 Package outline
DCR3030V42
Phase Control Thyristor
CURRENT RATINGS
T
case
= 60°C unless stated otherwise
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Parameter
Test Conditions
Max.
Units
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
3030
4760
4550
A
A
A
SURGE RATINGS
Symbol
I
TSM
It
2
Parameter
Surge (non-repetitive) on-state current
I t for fusing
2
Test Conditions
10ms half sine, T
case
= 125°C
V
R
= 0
Max.
40.6
8.24
Units
kA
MA s
2
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance – junction to case
Test Conditions
Double side cooled
Single side cooled
DC
Anode DC
Cathode DC
R
th(c-h)
Thermal resistance – case to heatsink
Clamping force 54kN
(with mounting compound)
T
vj
T
stg
F
m
Virtual junction temperature
Storage temperature range
Clamping force
(blocking)
Double side
Single side
Min.
-
-
-
-
-
-
-55
48.0
Max.
0.00746
0.0130
0.0178
0.002
0.004
125
125
59.0
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
kN
DCR3030V42
Phase Control Thyristor
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
Parameter
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Test Conditions
At V
RRM
/V
DRM
, T
case
= 125°C
To 67% V
DRM
, T
j
= 125°C, gate open
From 67% V
DRM
to 2x I
T(AV)
Gate source 30V, 10,
t
r
< 0.5µs, T
j
= 125°C
Repetitive 50Hz
Non-repetitive
Min.
-
-
-
-
Max.
200
1500
200
400
Units
mA
V/µs
A/µs
A/µs
V
T(TO)
Threshold voltage – Low level
Threshold voltage – High level
200A to 1700A at T
case
= 125°C
1700A to 7000A at T
case
= 125°C
200A to 1700A at T
case
= 125°C
1700A to 7000A at T
case
= 125°C
V
D
= 67% V
DRM
, gate source 30V, 10
t
r
= 0.5µs, T
j
= 25°C
-
-
-
-
TBD
0.82
0.98
0.292
0.198
TBD
V
V
m
m
µs
r
T
On-state slope resistance – Low level
On-state slope resistance – High level
t
gd
Delay time
t
q
Turn-off time
T
j
= 125°C, V
R
= 200V, dI/dt = 1A/µs,
dV
DR
/dt = 20V/µs linear
250
500
µs
Q
S
I
L
I
H
Stored charge
Latching current
Holding current
T
j
= 125°C, dI/dt – 1A/µs, V
R pk
=3000V,
V
RM
= 1700V
T
j
= 25°C, V
D
= 5V
T
j
= 25°C, R
G-K
=
,
I
TM
= 500A, I
T
= 5A
1600
-
-
3500
3
300
µC
A
mA
DCR3030V42
Phase Control Thyristor
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
V
GD
I
GT
I
GD
Parameter
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Gate non-trigger current
Test Conditions
V
DRM
= 5V, T
case
= 25°C
At V
DRM,
T
case
= 125°C
V
DRM
= 5V, T
case
= 25°C
V
DRM
= 5V, T
case
= 25°C
Max.
1.5
TBD
250
TBD
Units
V
V
mA
mA
CURVES
7000
Instantaneous on-state current
T
I - (A)
6000
5000
4000
3000
2000
1000
0
0.5
min 125°C
max 125°C
25°C
max 25°C
1.0
1.5
2.0
2.5
Instantaneous on-state voltage V
T
- (V)
Fig.2 Maximum & minimum on-state characteristics
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D.I
T
Where
A = 0.866995
B = -0.042053
C = 0.000100
D = 0.014062
these values are valid for T
j
= 125°C for I
T
500A to 10000A
DCR3030V42
Phase Control Thyristor
16
14
130
Maximum case temperature, T
case
( C )
Mean power dissipation - (kW)
180
120
90
60
30
120
110
100
90
80
70
60
50
40
30
20
10
0
0
1000
2000
3000
12
10
8
6
4
2
0
0
1000
2000
3000
4000
5000
180
120
90
60
30
o
4000
5000
Mean on-state current, I
T(AV)
- (A)
Fig.3 On-state power dissipation – sine wave
Mean on-state current, I
T(AV
) - (A)
Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
130
Maximum heatsink temperature, T
Heatsink
- ( C)
120
110
100
90
80
70
60
50
40
30
20
10
0
0
1000
2000
180
120
90
60
30
o
12
11
Mean power dissipation - (kW)
10
9
8
7
6
5
4
3
2
1
0
0
1000
2000
3000
4000
d.c.
180
120
90
60
30
3000
4000
5000
6000
Mean on-state current, I
T(AV)
- (A)
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave
Mean on-state current, I
T(AV)
- (A)
Fig.6 On-state power dissipation – rectangular wave
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