Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Infineon |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | LOW NOISE |
| Maximum collector current (IC) | 0.1 A |
| Collector-emitter maximum voltage | 30 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 420 |
| JESD-30 code | R-PDSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 0.33 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 250 MHz |
京公网安备 11010802033920号
EEWORLD
