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BFR91G

Description
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ROHS COMPLIANT, M236, MACRO-T-3
CategoryDiscrete semiconductor    The transistor   
File Size117KB,5 Pages
ManufacturerADPOW
Websitehttp://www.advancedpower.com/
Environmental Compliance
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BFR91G Overview

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ROHS COMPLIANT, M236, MACRO-T-3

BFR91G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerADPOW
package instructionDISK BUTTON, O-CRDB-F3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.035 A
Collector-based maximum capacity1 pF
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeO-CRDB-F3
Number of components1
Number of terminals3
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationRADIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)5000 MHz
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
BFR91
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
BFR91G
* G Denotes RoHS Compliant, Pb Free Terminal Finish
Features
High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA
Low Noise Figure – NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz
High Power Gain – Gmax = 16 dB (typ) @ f = 0.5 GHz, 10.9dB (typ) @ 1GHz
Macro T
(STYLE #2)
DESCRIPTION:
Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in
applications requiring fast switching times.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Value
12
15
3.0
35
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
D
Total Device Dissipation @ TA = 60ºC
Derate above 60ºC
Storage Temperature
-65 to +150
ºC
ºC/W
Total Device Dissipation @ TA = 60ºC
Derate above 60ºC
180
2.0
mWatts
mW/
ºC
Tstg
R
θ
JA
500
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
Rev A 9/2005

BFR91G Related Products

BFR91G
Description RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ROHS COMPLIANT, M236, MACRO-T-3
Is it Rohs certified? conform to
Maker ADPOW
package instruction DISK BUTTON, O-CRDB-F3
Reach Compliance Code unknown
ECCN code EAR99
Other features LOW NOISE
Maximum collector current (IC) 0.035 A
Collector-based maximum capacity 1 pF
Collector-emitter maximum voltage 12 V
Configuration SINGLE
highest frequency band ULTRA HIGH FREQUENCY BAND
JESD-30 code O-CRDB-F3
Number of components 1
Number of terminals 3
Package body material CERAMIC, METAL-SEALED COFIRED
Package shape ROUND
Package form DISK BUTTON
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type NPN
Certification status Not Qualified
surface mount YES
Terminal form FLAT
Terminal location RADIAL
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications SWITCHING
Transistor component materials SILICON
Nominal transition frequency (fT) 5000 MHz

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