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GBJ1508

Description
3.2 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    Ordinary rectifier bridge   
File Size149KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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GBJ1508 Overview

3.2 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

GBJ1508 Parametric

Parameter NameAttribute value
PackageGBJ
Maximum recurrent peak reverse voltage800
Maximum average forward rectified curre7.5
Peak forward surge curre240
Maximum instantaneous forward voltage1.05
Maximum reverse curre10
TJ(℃)-65~+150
GBJ15005-GBJ1510
15A Glass Passivated Bridge Rectifier
Features
·
·
·
·
·
·
·
Glass Passivated Die Construction
High Case Dielectric Strength of 1500VRMS
Low Reverse Leakage Current
Surge Overload Rating to 240A Peak
Ideal for Printed Circuit Board Applications
Plastic Material - UL Flammability
Classification 94V-0
UL Listed Under Recognized Component
Index, File Number E94661
GBJ
Dim
A
B
Min
29.70
19.70
17.00
3.80
7.30
9.80
2.00
0.90
2.30
4.40
3.40
3.10
2.50
0.60
10.80
Max
30.30
20.30
18.00
4.20
7.70
10.20
2.40
1.10
2.70
4.80
3.80
3.40
2.90
0.80
11.20
L
K
A
B
M
C
D
E
G
Mechanical Data
·
·
·
·
·
·
·
Case: Molded Plastic
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
Polarity: Molded on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Weight: 6.6 grams (approx)
Marking: Type Number
_
J
H
I
S
P
C
R
N
H
I
J
K
L
M
N
P
R
S
D
3.0 X 45°
G
E
E
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Output Current
@ T
C
= 100°C
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
Forward Voltage (per element)
Peak Reverse Current
at Rated DC Blocking Voltage
I
2
t Rating for Fusing (t < 8.3ms) (Note 1)
Typical Junction Capacitance per Element (Note 2)
Typical Thermal Resistance, Junction to Case (Note 3)
Operating and Storage Temperature Range
@ I
F
= 7.5A DC
@ T
C
= 25°C
@ T
C
= 125°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
R
I
2
t
C
j
R
qJC
T
j
, T
STG
GBJ
15005
50
35
@ T
A
= 25°C unless otherwise specified
GBJ
1501
100
70
GBJ
1502
200
140
GBJ
1504
400
280
15
240
1.05
10
500
240
60
0.8
-65 to +150
GBJ
1506
600
420
GBJ
1508
800
560
GBJ
1510
1000
700
Unit
V
V
A
A
V
µA
A
2
s
pF
°C/W
°C
Notes:
1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm copper plate heat sink.
http://www.luguang.cn
mail:lge@luguang.cn

GBJ1508 Related Products

GBJ1508 GBJ15005 GBJ1501 GBJ1502 GBJ1504 GBJ1506 GBJ1510
Description 3.2 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 15 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Package GBJ GBJ GBJ GBJ GBJ GBJ GBJ
Maximum recurrent peak reverse voltage 800 50 100 200 400 600 1000
Maximum average forward rectified curre 7.5 7.5 7.5 7.5 7.5 7.5 7.5
Peak forward surge curre 240 240 240 240 240 240 240
Maximum instantaneous forward voltage 1.05 1.05 1.05 1.05 1.05 1.05 1.05
Maximum reverse curre 10 10 10 10 10 10 10
TJ(℃) -65~+150 -65~+150 -65~+150 -65~+150 -65~+150 -65~+150 -65~+150

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