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GBU406

Description
4 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    Ordinary rectifier bridge   
File Size187KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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GBU406 Overview

4 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

GBU406 Parametric

Parameter NameAttribute value
PackageGBU
Maximum recurrent peak reverse voltage600
Maximum average forward rectified current2
Peak forward surge current135
Maximum instantaneous forward voltage1
Maximum reverse current5
TJ(℃)-55~+150
GBU401-GBU407
Single Phase 4.0AMP.Glass Passivated Bridge Rectifiers
GBU
Features
Ideal for printed circuit board
Reliable low cost construction
Plastic material has Underwriters Laboratory
Flammability Classification 94V-0
High case dielectric strength of 1500VRMS
Surge overload rating to 150 amperes peak
High temperature soldering guaranteed:
o
260 C / 10 seconds / .375”, (9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Mechanical Data
Case: Molded plastic body
Weight: 0. 3 ounce, 8.0 grams
Mounting torque: 5 in. lbs. Max.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
@T
C
= 100 C
Peak Forward Surge Current, 8.3 ms Single
Half Sne-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 2.0A
@ 4.0A
Maximum DC Reverse Current @ T
A
=25 C
o
at Rated DC Blocking Voltage @ T
A
=125 C
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance (Note 1)
(Note 2)
Operating Temperature Range
o
Symbol GBU GBU GBU GBU GBU GBU GBU
Units
401 402 403 404 405 406 407
V
RRM
50
100 200 400 600 800 1000
V
V
RMS
35
70
140 280 420 560 700
V
V
DC
50
100 200 400 600 800 1000
V
I
(AV)
I
FSM
V
F
I
R
4.0
150
1.0
1.1
5.0
500
100
20
4.0
-55 to +150
-55 to + 150
45
o
A
A
V
uA
uA
pF
C/W
o
o
Cj
R
θJA
R
θJC
T
J
Storage Temperature Range
T
STG
1. Mounted on P.C.B. with 0.5” x 0.5” (12mm x 12mm) Copper Pads and 0.375” 9.5mm) Lead Length. 2.
Notes:
Mounted on Al. Plate of 2” x 3” x 0.25” Al-Plate Heatsink.
3. Measured at 1.0MHZ and Applied Reverse Voltage of 4.0 Volts.
C
C
http://www.luguang.cn
mail:lge@luguang.cn

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GBU406 GBU401 GBU402 GBU403 GBU404 GBU405 GBU407
Description 4 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER,1-PHASE FULL-WAVE,100V V(RRM),BR-7W 4 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 2.4 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
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