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Datasheet> All Categories > Analog mixed-signal IC> Trigger device> T1329N20TOF
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T1329N20TOF

Description
Silicon Controlled Rectifier, 2600A I(T)RMS, 1329000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 Element,
CategoryAnalog mixed-signal IC    Trigger device   
File Size266KB，10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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T1329N20TOF Overview

Silicon Controlled Rectifier, 2600A I(T)RMS, 1329000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 Element,

T1329N20TOF Parametric

Parameter NameAttribute value
MakerInfineon
Reach Compliance Codecompliant
Nominal circuit commutation break time300 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current250 mA
Maximum DC gate trigger voltage2.2 V
Maximum holding current300 mA
JESD-30 codeO-CXDB-X4
Maximum leakage current150 mA
On-state non-repetitive peak current26500 A
Number of components1
Number of terminals4
Maximum on-state current1329000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current2600 A
Off-state repetitive peak voltage2000 V
Repeated peak reverse voltage2000 V
surface mountYES
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Trigger device typeSCR

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Download Datasheet
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T1329N
V
DRM
,V
RRM
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T
vj
= -40°C... T
vj max
enndaten
repetitive peak forward off-state and reverse voltages
Vorwärts-Stossspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stossspitzensperrspannung
non-repetitive peak reverse voltage
Durchlassstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stossstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
C
= 85 °C
T
C
= 70 °C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 60747-6
f = 50 Hz, i
GM
= 1 A, di
G
/dt = 1 A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
th
5.Kennbuchstabe / 5 letter F
T
vj
= -40°C... T
vj max
Elektrische Eigenschaften
T
vj
= +25°C... T
vj max
V
DSM
V
RSM
I
TRMSM
I
TAVM
I
TSM
I²t
(di
T
/dt)
cr
(dv
D
/dt)
cr
1800
2000
2200
1800
2000
2200
1900
2100
2300
2600
V
V
V
V
V
V
V
V
V
A
1329 A
1655 A
26500 A
23000 A
3510 10³ A²s
2645 10³ A²s
200 A/µs
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlassspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlasskennlinie
400 A
≤
i
T
≤
6500 A
on-state characteristic
T
vj
= T
vj max
, i
T
= 3 kA
T
vj
= T
vj max
, i
T
= 1 kA
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
v
T
V
(TO)
r
T
A=
B=
C=
D=
I
GT
V
GT
I
GD
V
GD
I
H
max.
max.
1,65 V
1,13 V
0,90 V
0,234 mΩ
v
T
=
A
+
B
⋅
i
T
+
C
⋅
ln ( i
T
+
1)
+
D
⋅
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
i
T
T
vj
= 25 °C, v
D
= 12V
T
vj
= 25 °C, v
D
= 12V
T
vj
= T
vj max
, v
D
= 12V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 12V
9,012E-01
1,890E-04
-2,256E-02
6,587E-03
max.
max.
max.
max.
max.
max.
max.
max.
max.
250 mA
2,2 V
10 mA
5 mA
0,25 V
300 mA
2000 mA
200 mA
4 µs
T
vj
= 25°C, v
D
= 12V, R
GK
≥
10
Ω
I
L
i
GM
= 1 A, di
G
/dt = 1 A/µs, t
g
= 20 µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
i
D
, i
R
DIN IEC 60747-6
t
gd
T
vj
= 25 °C, i
GM
= 1 A, di
G
/dt = 1 A/µs
prepared by: H.Sandmann
approved by: J.Przybilla
date of publication:
revision:
2007-08-31
1
BIP-AC / 01-10-01, M.Droldner
A 24/01
Seite/page
1/10

T1329N20TOF Related Products

T1329N20TOF T1329N18TOF
Description Silicon Controlled Rectifier, 2600A I(T)RMS, 1329000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 Element, Silicon Controlled Rectifier, 2600A I(T)RMS, 1329000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element,
Maker Infineon Infineon
Reach Compliance Code compliant compliant
Nominal circuit commutation break time 300 µs 300 µs
Configuration SINGLE SINGLE
Critical rise rate of minimum off-state voltage 1000 V/us 1000 V/us
Maximum DC gate trigger current 250 mA 250 mA
Maximum DC gate trigger voltage 2.2 V 2.2 V
Maximum holding current 300 mA 300 mA
JESD-30 code O-CXDB-X4 O-CXDB-X4
Maximum leakage current 150 mA 150 mA
On-state non-repetitive peak current 26500 A 26500 A
Number of components 1 1
Number of terminals 4 4
Maximum on-state current 1329000 A 1329000 A
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND
Package form DISK BUTTON DISK BUTTON
Certification status Not Qualified Not Qualified
Maximum rms on-state current 2600 A 2600 A
Off-state repetitive peak voltage 2000 V 1800 V
Repeated peak reverse voltage 2000 V 1800 V
surface mount YES YES
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UNSPECIFIED UNSPECIFIED
Trigger device type SCR SCR

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