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DB153S

Description
BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size150KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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DB153S Overview

BRIDGE RECTIFIER DIODE

DB153S Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeBRIDGE RECTIFIER DIODE
DB151S-DB157S
Silicon Bridge Rectifiers
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.5 A
Features
Rating to 1000V PRV
Surge overload rating to 30 Amperes peak
Glass passivated chip junctions
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
Lead: silver plated copper, solderde plated
Plastic material has UL flammability classification
94V-O
Polarity symbols molded on body
Weight: 0.016 ounces,0.45 grams
3.2±
0.2
5± 0.2
8.3± 0.1
1± 0.1
DB-S
7.9± 0.2
6.3± 0.2
8.3± 0.3
6.4± 0.1
0.3
1.2± 0.3
10± 0.6
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
DB
151S
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current
@T
A
=25
DB
152S
100
70
100
DB
153S
200
140
200
DB
154S
400
280
400
1.5
DB
155S
600
420
600
DB
156S
800
560
800
DB
157S
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 1.5 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
40
A
V
F
I
R
T
J
T
STG
1.1
10.0
1.0
- 55 ---- + 150
- 55 ---- + 150
V
μ
A
mA
Operating junction temperature range
Storage temperature range
http://www.luguang.cn
mail:lge@luguang.cn

DB153S Related Products

DB153S DB151S DB152S DB154S DB155S DB156S
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