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DBLS101G

Description
1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size184KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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DBLS101G Overview

1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

DBLS101G Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Minimum breakdown voltage50 V
Maximum average input current1 A
Processing package descriptionGREEN, PLASTIC, DBLS, 4 PIN
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingPURE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage50 V
Maximum non-repetitive peak forward current40 A
DBL(S)101G - DBL(S)107G
Single Phase 1.0 AMP. Glass Passivated Bridge Rectifiers
DBL
.
255(
6.5) .315(8.0)
285( 24)
7.
.
245( 2) .
6.
.10 2.
2( 60)
.0 2.
94( 40)
.335(8.51)
.3
20(8.1
2)
.08(.03)
2
.05(1.
27)
Features
Glass passivated junction
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique
High temperature soldering guaranteed:
o
260 C / 10 seconds / 0.375” ( 9.5mm )
lead length at 5 lbs., ( 2.3 kg ) tension
Small size, simple installation
High surge current capability
.0
45(1.1
4)
.035(0.8
9)
205(5.
2)
.0
23(0.58) .
95(5.0)
.018(0.
46) .1
.185( 69)
4.
.150(3.81)
.0
75(1.0)
9
.055(1.3
9)
.350(8.
9)
.300( 6)
7.
.013(0.33)
.0088(0.
22)
DBLS
.
205( 2)
5.
.1 5.0)
95(
.04 20)
7(1.
.040(1.0
2)
.404(10.3)
.3 9.
86( 80)
.33 8.
5( 51)
.3 8.13)
45
0
20(
.
255( 5)
6.
.
245( 2)
6.
.013(0.33)
.00
88(0.2)
2
.10 2.
2( 60)
.0 2.40) .0
94(
60(1.3)
5
.040(1.0
2)
.013(0.33)
.003(0.0
76)
Dimensions in inches and (millimeters)
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Ratings and Electrical Characteristics
Type Number
DBL DBL DBL DBL DBL DBL DBL
101G 102G 103G 104G 105G 106G 107G
Symbol
DBLS DBLS DBLS DBLS DBLS DBLS DBLS
101G 102G 103G 104G 105G 106G 107G
Units
V
V
V
A
A
V
uA
uA
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
@T
A
= 40 C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current @ T
A
=25 C
o
at Rated DC Blocking Voltage @ T
A
=125 C
Typical Junction Capacitance
Typical Thermal resistance (Note 1)
Operating Temperature Range
o
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
50
35
50
100
70
100
200
140
200
400
280
400
1.0
50
1.1
10
500
600
420
600
800
560
800
1000
700
1000
Cj
R
θJA
R
θJL
T
J
25
40
15
-55 to +150
-55 to +150
o
pF
C/W
o
o
Storage Temperature Range
T
STG
1. Thermal Resistance from Junction to Ambient and from Junction to Lead Mounted
Notes:
On P.C.B. with 0.2” x 0.2”” (5 x 5mm) Copper Pads.
2. DBLS for Surface Mount Package.
C
C
http://www.luguang.cn
mail:lge@luguang.cn
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