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DBLS207G

Description
2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size123KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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DBLS207G Overview

2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

DBL201G - DBL209G
Single Phase2.0 AMP. Glass Passivated Bridge Rectifiers
DBL
Features
Glass passivated junction
Ideal for printed circuit board
Reliable low cost construction utilizing
molded plastic technique
High surge current capability
High temperature soldering guaranteed:
260
o
C / 10 seconds at 5 lbs., ( 2.3 kg )
tension
Small size, simple installation
DBLS
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
Maximum Recurrent Peak Reverse
Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
o
Current @T
A
= 40 C
Peak Forward Surge Current, 8.3 ms
Single Half Sine-wave Superimposed on
Rated Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 2.0A
Maximum DC Reverse Current
o
@T
A
=25 C at Rated DC Blocking Voltage
o
@ T
A
=125 C
Typical Thermal Resistance (Note)
Operating Temperature Range
Storage Temperature Range
DBL DBL DBL DBL DBL DBL DBL DBL DBL
201G 202G 203G 204G 205G 206G 207G 208G 209G
DBLS DBLS DBLS DBLS DBLS DBLS DBLS DBLS DBLS
Units
V
V
V
A
A
201G 202G 203G 204G 205G 206G 207G 208G 209G
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
R
θJA
R
θJL
T
J
T
STG
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800 1000 1200 1400
560
700
840
980
800 1000 1200 1400
2.0
50
1.15
10
500
40
15
-55 to +150
-55 to +150
o
1.30
V
uA
uA
C
/W
o
o
C
C
Note: Thermal resistance from Junction to Ambient and from Junction to Lead Mounted on
P.C.B. with 0.51 x 0.51” (13 x 13mm) Coper Pads.
http://www.luguang.cn
mail:lge@luguang.cn
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